Publication:

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Date

2014
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorMa, J.
dc.contributor.authorZhang, J.F.
dc.contributor.authorJi, Zhigang
dc.contributor.authorBenbakhti, Brahim
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorZheng, Xue Feng
dc.contributor.authorMitard, Jerome
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHall, S.
dc.contributor.authorRobertson, J.
dc.contributor.authorChalker, P.
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-22T03:17:33Z
dc.date.available2021-10-22T03:17:33Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24172
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6786032&queryText%3Dma+characterization+negative+bias
dc.source.beginpage1307
dc.source.endpage1315
dc.source.issue5
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume61
dc.title

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
27504.pdf
Size:
3.53 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles