Browsing by Author "Sa, N."

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Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

Kang, JinFeng
;
Yu, HongYu
;
Ren, C.
;
Wang, X.P.
;
Li, M.F.
;
Chan, D.S.H.
;
Yeo, Y.C.
;
Sa, N.
;
Yang, H.
Journal article
2005-04, IEEE Electron Device Letters, (4) 26, p.237-239
Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps

Sa, N.
;
Kang, J.F.
;
Yang, H.
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Liu, X.Y.
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He, Y.D.
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Han, R.Q.
;
Ren, C.
;
Yu, HongYu
;
Chan, D.S.H.
;
Kwong, D.-L.
Journal article
2005-09, IEEE Electron Device Letters, (9) 26, p.610-612
Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process

Kang, JinFeng
;
Yu, HongYu
;
Ren, C.
;
Yang, H.
;
Sa, N.
;
Liu, X.Y.
;
Han, R.Q.
;
Li, M.F.
;
Chan, D.S.H.
Proceedings paper
2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, p.375-378