Browsing by Author "Scappucci, Giordano"
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Publication Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices
Meeting abstract2018, 1st Joint ISTDM / ICSI 2018 Conference, 27/05/2018Publication Photoluminescence of phosphorus atomic layer doped Ge grown on Si
Publication Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Journal article2019, ECS Journal of Solid State Science and Technology, (8) 8, p.P392-P399Publication Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Proceedings paper2018, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 8, 30/09/2018, p.163-175Publication Very low temperature epitaxy of group-IV semiconductors for use in finFET, stacked nanowires and monolithic 3D integration
Meeting abstract2018, ECS Fall Meeting, SiGe & Ge Symposium, 30/09/2018, p.1050