Browsing by Author "Schmidt, B."

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Chemistry of the silicon oxide surface: adsorption from SC1 solutions

Hall, L.
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Sees, J.
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Hurd, Trace
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Schmidt, B.
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Bellay, L.
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Loewenstein, Lee
;
Mertens, Paul
Oral presentation
1998, 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
Chemistry of the silicon oxide surface: adsorption from SC1 solutions

Hall, L.
;
Sees, J.
;
Hurd, Trace
;
Schmidt, B.
;
Bellay, L.
;
Loewenstein, Lee
;
Mertens, Paul
Proceedings paper
1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.53-58
Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Chen, Peng
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Chu, Paul K.
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Hochbauer, T.
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Lee, J-K
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Nastasi, M.
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Buca, D.
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Mantl, S
;
Loo, Roger
Journal article
2005, Applied Physics Letters, (86) 3, p.031904-1-031904-3
Millisecond flash lamp annealing of shallow implanted layers in Ge

Wündisch, C.
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Posselt, M.
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Schmidt, B.
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Heera, V.
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Schumann, T.
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Mücklich, A.
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Grötzschel, R.
Journal article
2009, Applied Physics Letters, (95) 25, p.252107
Millisecond flash lamp annealing of ultrashallow implanted layers in Ge

Posselt, M.
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Wündisch, C.
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Schmidt, B.
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Schumann, T.
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Mücklich, A.
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Skorupa, W.
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Clarysse, Trudo
Meeting abstract
2009, 216th ECS Meeting, 4/10/2009, p.2391
n+ doping of Ge by P or As implantation and flash-lamp annealing

Wündisch, C.
;
Posselt, M.
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Anwand, W.
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Schmidt, B.
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Grötzschel, R.
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Mücklich, A.
;
Skorupa, W.
Meeting abstract
2008, E-MRS Spring Meeting Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008
RTA and FLA of Ultra-shallow implanted layers in Ge

Wündisch, C.
;
Posselt, M.
;
Anwand, W.
;
Schmidt, B.
;
Mücklich, A.
;
Skorupa, W.
;
Clarysse, Trudo
Proceedings paper
2008, 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 30/09/2008, p.245-249