Browsing by Author "Schroder, D.K."

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Influence of halo implant on leakage current and sheet resistance of ultra-shallow p-n junctions

Faifer, V.N.
;
Schroder, D.K.
;
Current, M.I.
;
Clarysse, Trudo
;
Timans, P.J.
;
Zangerle, T.
Proceedings paper
2007, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling, 6/05/2007, p.272-279
Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions

Faifer, V.N.
;
Schroder, D.K.
;
Current, M.I.
;
Clarysse, Trudo
;
Timans, P.J.
;
Zangerle, T.
Journal article
2007-09, Journal of Vacuum Science and Technology B, (25) 5, p.1588-1592
Junction photovoltage (JPV) techniques for ultra-shallow junction characterization

Faifer, V.N.
;
Current, M.I.
;
Schroder, D.K.
;
Clarysse, Trudo
;
Vandervorst, Wilfried
Proceedings paper
2007, Analytical and Diagnostic Techniques for Semiconductor Materials, devices and Processes 7, 7/10/2007, p.135-147
Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology

Faifer, V.N.
;
Schroder, D.K.
;
Current, M.I.
;
Clarysse, Trudo
;
Timans, P.J.
;
Zangerle, T.
Proceedings paper
2007, Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (NIST), 27/03/2007, p.246-250