Browsing by Author "Selmi, L."
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Publication Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 3, p.1745-1751Publication Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K
Journal article2024, SOLID-STATE ELECTRONICS, (215) May, p.Art. 108881Publication Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices
Journal article2009, IEEE Transactions on Circuits and Systems I: Regular Papers, (56) 5, p.920-932Publication Design of UWB LNA in 45nm CMOS technology: Planar vs. FinFET
Proceedings paper2008-05, IEEE International Symposium on Circuits and Systems, 18/05/2008, p.2701-2704Publication Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
;Serra, N. ;Conzatti, F. ;Esseni, D. ;De Michielis, M. ;Palestri, P. ;Selmi, L. ;Thomas, S.Whall, T. E.Proceedings paper2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.71-74Publication Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
;Driussi, F. ;Esseni, D. ;Selmi, L. ;Schmidt, M. ;Lemme, M. ;Kurz, H. ;Buca, D. ;Mantl, S.Luysberg, M.Proceedings paper2007, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007, p.315-318Publication Impact of band structure on charge trapping in thin SiO2/Al2O3/poly-Si gate stacks
;Pantisano, Luigi ;Lucci, L. ;Cartier, Ed ;Kerber, Andreas; ;Green, M.Selmi, L.Journal article2004-05, IEEE Electron Device Letters, (25) 5, p.320-322Publication Impact of high-mobility materials on the performance of near- and sub-threshold CMOS logic circuits
Journal article2013, IEEE Transactions on Electron Devices, (60) 3, p.972-977Publication New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications
Proceedings paper2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022Publication Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISCPublication Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes
;Tondelli, L.; ;Scholten, A. J. ;Dinh, T. V. ;Tam, S. -W. ;Pijper, R. M. T.Selmi, L.Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 11, p.6976-6982