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Browsing by Author "Selmi, L."

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    Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

    Asanovski, R.
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    Arimura, Hiroaki  
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    de Marneffe, Jean-Francois  
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    Palestri, P.
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    Horiguchi, Naoto  
    Journal article
    2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 3, p.1745-1751
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    Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K

    Asanovski, Ruben  
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    Grill, Alexander  
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    Franco, Jacopo  
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    Palestri, P.
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    Mertens, Hans  
    Journal article
    2024, SOLID-STATE ELECTRONICS, (215) May, p.Art. 108881
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    Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices

    Ponton, Davide
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    Palestri, P.
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    Esseni, D.
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    Selmi, L.
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    Tiebout, M.
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    Parvais, Bertrand  
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    Siprak, D.
    Journal article
    2009, IEEE Transactions on Circuits and Systems I: Regular Papers, (56) 5, p.920-932
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    Design of UWB LNA in 45nm CMOS technology: Planar vs. FinFET

    Ponton, Davide
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    Palestri, P
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    Esseni, D.
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    Selmi, L.
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    Tiebout, M.
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    Parvais, Bertrand  
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    Knoblinger, G.
    Proceedings paper
    2008-05, IEEE International Symposium on Circuits and Systems, 18/05/2008, p.2701-2704
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    Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

    Serra, N.
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    Conzatti, F.
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    Esseni, D.
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    De Michielis, M.
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    Palestri, P.
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    Selmi, L.
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    Thomas, S.
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    Whall, T. E.
    Proceedings paper
    2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.71-74
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    Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

    Driussi, F.
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    Esseni, D.
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    Selmi, L.
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    Schmidt, M.
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    Lemme, M.
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    Kurz, H.
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    Buca, D.
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    Mantl, S.
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    Luysberg, M.
    Proceedings paper
    2007, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007, p.315-318
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    Impact of band structure on charge trapping in thin SiO2/Al2O3/poly-Si gate stacks

    Pantisano, Luigi
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    Lucci, L.
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    Cartier, Ed
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    Kerber, Andreas
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    Groeseneken, Guido  
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    Green, M.
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    Selmi, L.
    Journal article
    2004-05, IEEE Electron Device Letters, (25) 5, p.320-322
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    Impact of high-mobility materials on the performance of near- and sub-threshold CMOS logic circuits

    Crupi, F.
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    Albano, D.
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    Alioto, M.
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    Franco, Jacopo  
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    Selmi, L.
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    Mitard, Jerome  
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    Groeseneken, Guido  
    Journal article
    2013, IEEE Transactions on Electron Devices, (60) 3, p.972-977
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    New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications

    Asanovski, R.
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    Grill, Alexander  
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    Franco, Jacopo  
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    Palestri, P.
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    Beckers, Arnout  
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    Kaczer, Ben  
    Proceedings paper
    2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022
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    Polarity dependent charge trapping in thin SiO2/Al2O3 gate staks with poly-Si gate electrodes: influence of high temperature annealing

    Lucci, Luca
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    Pantisano, Luigi
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    Cartier, Eduard
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    Kerber, Andreas
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    Groeseneken, Guido  
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    Ho, M.Y.
    Oral presentation
    2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISC
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    Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes

    Tondelli, L.
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    Asanovski, Ruben  
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    Scholten, A. J.
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    Dinh, T. V.
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    Tam, S. -W.
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    Pijper, R. M. T.
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    Selmi, L.
    Journal article
    2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 11, p.6976-6982

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