Browsing by Author "Slotte, Jonatan"
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Publication A demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x
Journal article2020-05, Journal of Applied Physics, (127) 19, p.195703Publication Compensating defects in epitaxial Ge and GexSn1-x
Meeting abstract2019, E-MRS Fall Meeting Warsaw 2019, 16/09/2019Publication Evolution of phosphorus-vacancy clusters in germanium
Journal article2019-01, Journal of Applied Physics, (125) 2, p.25701Publication Evolution of phosphorus-vacancy clusters in germanium
Meeting abstract2018, eMRS 2018 Fall Meeting, Symposium U: Monolithic and Heterogeneous Integration of Advanced Materials & Devices on Silicon, 17/09/2018, p.U.10.5Publication Heavily phosphorus doped germanium: strong relationship of phosphorus with vacancies and impact of Sn alloying on doping activation
Journal article2019, Journal of Applied Physics, (125) 22, p.225703Publication Interplay of Sn, P and vacancies in the Ge lattice
Meeting abstract2017-09, eMRS Fall Meeting Symposium M Material and device integration on silicon for advanced applications, 18/09/2017Publication Manifestation of vacancy-As complexes in As doped GeSn epilayers
Meeting abstract2018, European Materials Research Society Fall Meeting Symposium U: Monolithic and Heterogeneous Integration of Advanced Materials .., 17/09/2018, p.U.P.12Publication On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications
Journal article2018-04, ECS Journal of Solid State Science and Technology, (7) 5, p.P228-P237Publication On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films
Journal article2016, Applied Physics Letters, (108) 8, p.82106Publication Open volume defects in ultra-thin TiO2 layers embedded in VMCO-like samples studied with positron annihilation spectroscopy
Journal article2022, JOURNAL OF APPLIED PHYSICS, (131) 24, p.245301Publication Positron annihilation spectroscopy on open-volume defects in group IV semiconductors
Publication Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx
Journal article2020-05, ECS Journal of Solid State Science and Technology, (9) 4, p.44010