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Browsing by Author "Sormunen, Jaakko"

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    200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration

    Li, Xiangdong  
    ;
    Van Hove, Marleen
    ;
    Zhao, Ming  
    ;
    Geens, Karen  
    ;
    Lempinen, Vesa-Pekka
    ;
    Sormunen, Jaakko
    Proceedings paper
    2017, 41st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 21/05/2017, p.103-104
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    200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration

    Li, Xiangdong  
    ;
    Van Hove, Marleen
    ;
    Zhao, Ming  
    ;
    Geens, Karen  
    ;
    Lempinen, Vesa-Pekka
    ;
    Sormunen, Jaakko
    Journal article
    2017, IEEE Electron Device Letters, (38) 7, p.918-921
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    Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

    Li, Xiangdong  
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    Zhao, Ming  
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    Bakeroot, Benoit  
    ;
    Geens, Karen  
    ;
    Guo, Weiming
    ;
    Lempinen, Vesa-Pekka
    Journal article
    2019, IEEE Transactions on Electron Devices, (66) 1, p.553-536
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    MOCVD growth and characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration

    Zhao, Ming  
    ;
    Geens, Karen  
    ;
    Li, Xiangdong  
    ;
    Van Hove, Marleen
    ;
    Lempinen, Vesa-Pekka
    ;
    Sormunen, Jaakko
    Meeting abstract
    2017, 12th International Conference on Nitride Semiconductors - ICNS, 24/07/2017
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    Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration

    Li, Xiangdong  
    ;
    Van Hove, Marleen
    ;
    Zhao, Ming  
    ;
    Geens, Karen  
    ;
    Guo, Weiming
    ;
    You, Shuzhen  
    Journal article
    2018, IEEE Electron Device Letters, (39) 7, p.999-1002

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