Browsing by Author "Stampfer, B."

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States

Efficient physical defect model applied to PBTI in high-k stacks

Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release