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Browsing by Author "Sun, Jianwu"

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    Epitaxial Ge Growth in Ultra Narrow STI Patterned Si Wafer

    Hikavyy, Andriy  
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    Loo, Roger  
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    Sun, Jianwu
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    Shimura, Yosuke
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    Bender, Hugo  
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    Caymax, Matty  
    Meeting abstract
    2015, EMRS Fall Meeting Symposium O: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Appl., 15/09/2015
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    Ge epitaxial layer growth on Si in ultra narrow STI patterned structures

    Loo, Roger  
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    Hikavyy, Andriy  
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    Sun, Jianwu
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    Bender, Hugo  
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    Thean, Aaron  
    Proceedings paper
    2015-05, 9th International Conference on Si Epitaxy and Heterostructures - ICSI9, 17/05/2014, p.21-22
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    Group IV Epi processing, evolution in CMOS from 90 to 10nm node

    Loo, Roger  
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    Dhayalan, Sathish Kumar
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    Hikavyy, Andriy  
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    Ike, Shinichi
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    Rondas, Dirk  
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    Rosseel, Erik  
    Proceedings paper
    2014, ASM 2014 Users Meeting, 25/09/2014
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    High resolution X-ray diffraction for in-line monitoring of Ge MOSFET devices

    Ryan, Paul
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    Womington, Matthew
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    Sun, Jianwu
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    Hikavyy, Andriy  
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    Shimura, Yosuke
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    Witters, Liesbeth  
    Proceedings paper
    2015, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 14/04/2015, p.217-219
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    Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFET

    Sun, Jianwu
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    Loo, Roger  
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    Witters, Liesbeth  
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    Hikavyy, Andriy  
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    Shimura, Yosuke
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    Favia, Paola  
    Meeting abstract
    2014, E-MRS Fall Meeting Symposium J: Alternative Semiconductor Integration in Si Microelectronics, 15/09/2014, p.6 5
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    Strained Ge FINfet structures fabricated by selective epitaxial growth

    Loo, Roger  
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    Sun, Jianwu
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    Witters, Liesbeth  
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    Hikavyy, Andriy  
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    Vincent, Benjamin  
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    Shimura, Yosuke
    Proceedings paper
    2014, 7th International SiGe Technology and Device Meeting - ISTDM, 2/06/2014, p.19-20
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    Strained germanium quantum well p-FinFETs fabricated on 45nm fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

    Witters, Liesbeth  
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    Mitard, Jerome  
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    Loo, Roger  
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    Demuynck, Steven  
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    Chew, Soon Aik
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    Schram, Tom  
    Proceedings paper
    2015, Symposium on VLSI Technology, 16/06/2015, p.T56-T57
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    Ultimate nano-electronics: new material and device concepts for scaling nano-electronics beyond the Si roadmap

    Collaert, Nadine  
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    Alian, AliReza  
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    Arimura, Hiroaki  
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    Boccardi, Guillaume  
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    Eneman, Geert  
    Journal article
    2015, Microelectronic Engineering, 132, p.218-225
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    Use of X-ray techniques in the development of Ge MOSFET devices

    Sun, Jianwu
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    Hikavyy, Andriy  
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    Shimura, Yosuke
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    Witters, Liesbeth  
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    Tielens, Hilde  
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    Ryan, Paul
    Meeting abstract
    2014, EMRS Fall Meeting, Symposium J: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Appl., 15/09/2014
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    X-ray microdiffraction measurements to support epitaxial growth studies of strained Ge-cap / relaxed SiGe on STI nano-scale patterned Si wafers

    Loo, Roger  
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    Shimura, Yosuke
    ;
    Sun, Jianwu
    ;
    Ike, Shinichi
    ;
    Inuzuka, Yuuki
    ;
    Nakatsuka, Osau
    Book
    2015

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