Browsing by Author "Tallarico, Andrea Natale"
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Publication GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
Publication Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Proceedings paper2019-04, IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.4D4.1-4D4.10Publication Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation
Journal article2019, IEEE Electron Device Letters, (4) 40, p.518-521Publication Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
Journal article2017, IEEE Electron Device Letters, (38) 3, p.371-374