Browsing by Author "Tang, F."
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Publication Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.42-43Publication Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Proceedings paper2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.799-802Publication Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer
; ; ; ; ; Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.140-141