Browsing by Author "Temst, K."
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Publication Adsorption of O2 on Ge(100): Atomic geometry and site-specific electronic structure
Journal article2012, Journal of Physical Chemistry C, (9925) 9929, p.116-18Publication ALD on high mobility channels: engineering the proper gate stack passivation
Proceedings paper2010, Atomic Layer Deposition Applications 6, 10/10/2010, p.9-23Publication Artificial pinning arrays investigated by scanning Hall probe microscopy
Journal article2000, Physica C, (332) 1_4, p.20-26Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Meeting abstract2010, 218th ECS Meeting, 10/10/2010, p.1909Publication Characterization of periodic arrays of magnetic dots by x-ray reflectivity experiments
Oral presentation1999, 1st Belgian Crystallography Symposium; 28 October 1999; Brussels, Belgium.Publication Enhanced asymmetric magnetization reversal in nanoscale Co/CoO arrays : competition between exchange bias and magnetostatic coupling
;Girgis, E. ;Portugal, R.D. ;Loosvelt, H. ;Van Bael, M.J. ;Gordon, I. ;Malfait, M.Temst, K.Journal article2003-11, Virtual Journal of Nanoscale Science & Technology, (8) 19Publication Enhanced asymmetric magnetization reversal in nanoscale Co/CoO arrays : competition between exchange bias and magnetostatic coupling
;Girgis, E. ;Portugal, R.D. ;Loosvelt, H. ;Van Bael, M.J.; ;Malfait, MathieuTemst, K.Journal article2003-10, Physical Review Letters, (91) 18, p.187202Publication Enhanced pinning and matching effects in superconducting films with a lattice of submicrometer holes
;Baert, M. ;Metlushko, V. V. ;Potter, C. D.; ;Temst, K.; Gilabert, A.Journal article1994, Physica C, 235, p.2791-2792Publication Exchange bias induced by O ion implantation in ferromagnetic thin films
;Demeter, J. ;Menendez, E. ;Schrauwen, A. ;Teichert, A. ;Steitz, R. ;Vandezande, S.Wildes, A. R.Journal article2012, Journal of Physics D: Applied Physics, (45) 40, p.405004Publication Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS
Proceedings paper2010, Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2, 25/04/2010, p.173-183Publication Flux confinement by artificial arrays and clusters in superconducting films
Journal article1997, J. Low Temperature Physics, (106) 3_4, p.173-182Publication Formation of self-organized nanodots on GaN surface by Ar-ion implantation
Oral presentation2010, International Conference on Ion Beam Modification of Materials - IBMMPublication Formation of self-organized nanodots on GaN surface by Ar-ion implantation
Meeting abstract2010, 17th International Conference on Ion Beam Modification of Materials - IBMM, 22/08/2010Publication Ga(1-x)MnxAs anisotropy and magnetization reversal studied by polarised neutron reflectivity
Oral presentation2003, 2nd international conference and school on Spintronics and Quantum Information Technology - SPINTECH IIPublication GeSn technology: impact of Sn on Ge CMOS applications
Proceedings paper2011, ULSI Process Integration 7, 9/10/2011, p.231-238Publication GeSn Technology: Impact of Sn on Ge CMOS Applications
Meeting abstract2011, 220th Electrochemical Society Fall Meeting Symposium E9: ULSI Process Integration 7, 9/10/2011, p.2132Publication Growth and Properties of Ion Beam Synthesized Si/CoxN1-xSi2/Si (111) Structures
Journal article1994, J. Appl. Phys., 75, p.1201-1203Publication Hall probe microscopy
Meeting abstract2000, NEVAC / NNV Symposium "Toepassingen van Magnetische Nanostrukturen", 17/11/2000, p.23Publication In-plane vector magnetometry on rectangular Co dots using polarized neutron reflectivity
;Temst, K. ;Van Bael, M.J. ;Swerts, J. ;Buntinx, D. ;Van Haesendonck, ChrisBruynseraede, Y.Journal article2003, Journal of Vacuum Science & Technology B, (21) 5, p.2043-2047Publication Investigations of the surface chemical composition and atomic structure of ex-situ sulfur passivated Ge(100)
Proceedings paper2009, Analytical Techniques for Semiconductor Materials and Process Characterization 6 - ALTECH, 4/10/2009, p.421-432