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Browsing by Author "Thomas, S."

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    Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

    Simoen, Eddy  
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    Brouwers, Gijs
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    Eneman, Geert  
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    Bargallo Gonzalez, Mireia
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    De Jaeger, Brice  
    Journal article
    2008, Materials Science in Semiconductor Processing, (11) 5_6, p.364-367
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    Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

    Serra, N.
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    Conzatti, F.
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    Esseni, D.
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    De Michielis, M.
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    Palestri, P.
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    Selmi, L.
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    Thomas, S.
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    Whall, T. E.
    Proceedings paper
    2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.71-74
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    Factors influencing the leakage current in embedded SiGe source/drain junctions

    Simoen, Eddy  
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    Bargallo Gonzalez, Mireia
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    Vissouvanadin Soubaretty, Bertrand
    Journal article
    2008, IEEE Transactions on Electron Devices, (55) 3, p.925-930
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    Improved thermal stability of Ni-silicides on Si:C epitaxial layers

    Machkaoutsan, Vladimir  
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    Mertens, Sofie  
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    Bauer, R.
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    Lauwers, Anne  
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    Verheyden, Kurt
    Journal article
    2007, Microelectronic Engineering, 84, p.2542-2546
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    Thermal stability of Pt and C-doped NiSi films

    Machkaoutsan, Vladimir  
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    Pagès, X.
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    Bauer, M.
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    Thomas, S.
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    Mertens, Sofie  
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    Verheyden, K.
    Proceedings paper
    2007, 15th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP, 2/10/2007, p.145-149

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