Browsing by Author "Thomas, S."
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Publication Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Journal article2008, Materials Science in Semiconductor Processing, (11) 5_6, p.364-367Publication Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
;Serra, N. ;Conzatti, F. ;Esseni, D. ;De Michielis, M. ;Palestri, P. ;Selmi, L. ;Thomas, S.Whall, T. E.Proceedings paper2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.71-74Publication Factors influencing the leakage current in embedded SiGe source/drain junctions
Journal article2008, IEEE Transactions on Electron Devices, (55) 3, p.925-930Publication Improved thermal stability of Ni-silicides on Si:C epitaxial layers
Journal article2007, Microelectronic Engineering, 84, p.2542-2546Publication Thermal stability of Pt and C-doped NiSi films
Proceedings paper2007, 15th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP, 2/10/2007, p.145-149