Browsing by Author "Thomas, Shawn"
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Publication High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Meeting abstract2012-09, 222nd ECS Meeting, Pacific RIM Meeting on Electrochemical and Solid-State Science, 7/10/2012, p.3137Publication High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Proceedings paper2012, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.339-348Publication Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions
Journal article2009-06, Physica Status Solidi C, (6) 8, p.1901-1905Publication Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?
Journal article2009, Physica Status Solidi C, (6) 8, p.1912-1917Publication Leakage current study of Si1-xCx embedded source/drain junctions
Journal article2008, Applied Surface Science, (254) 19, p.6140-6143Publication SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
Proceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.1001-1013Publication Stability of silicon germanium stressors
Journal article2010, Thin Solid Films, (518) 6, Suppl. 1, p.S133-S135Publication Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Proceedings paper2008, 4th International SiGe Technology and Device Meeting, 11/05/2008