Browsing by Author "Tremouilles, David"
- Results per page
- Sort Options
Publication A novel method for guard ring efficiency assessment and its application for esd protection design and optimization
;Tremouilles, David ;Scholz, Mirko ;Mahadeva Iyer, Natarajan ;Marise, BafleurM, SawadaProceedings paper2007, Proceedings 45th IEEE International Reliability Physics Symposium - IRPS, 15/04/2007, p.606-607Publication A plug-and-play wideband RF circuit ESD protection methodology: T-diodes
Journal article2009, Microelectronics Reliability, (49) 12, p.1440-1446Publication Advanced ESD power clamp design for SOI FinFET CMOS technology
Proceedings paper2010, International Conference on Integrated Circuit Design and Technology - ICIDT, 2/07/2010, p.43-46Publication Calibrated wafer-level HBM measurements for quasi-static and transient device analysis
Proceedings paper2007, EOS/ESD Symposium Proceedings, 16/09/2007, p.89-94Publication Characterization and modeling of diodes in sub-45 nm CMOS technologies under HBM stress conditions
Proceedings paper2007, EOS/ESD Symposium Proceedings, 16/09/2007, p.158-164Publication Characterization and optimization of sub-32nm FinFET devices for ESD applications
Journal article2008, IEEE Transactions on Electron Devices, (55) 12, p.3507-3516Publication Design methodology for FinFET GG-NMOS ESD protecction devices
Proceedings paper2008-05, 2nd International ESD Workshop - IEW, 12/05/2008Publication Design methodology of FinFET devices that meet IC-level HBM ESD targets
Proceedings paper2008-09, 30th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD, 7/09/2008, p.295-303Publication Different failure signatures of multiple TLP and HBM stresses in an ESD robust protection structure
;Guitard, Nicolas ;Essely, Fabien ;Tremouilles, David ;Bafleur, MariseNolhier, NicolasJournal article2005, Microelectronics Reliability, (45) 9_11, p.1415-1420Publication Electrical and thermal scaling trends for SOI FinFET ESD design
Proceedings paper2009, 31st Annual EOS/ESD Symposium, 30/08/2009, p.2A.3Publication Electrical-based ESD characterization methodology for ultrathin body SOI MOSFETs
Journal article2010, IEEE Transactions on Device and Materials Reliability, (10) 1, p.130-141Publication Electrostatic discharges protection for emerging technologies and RF applications
Proceedings paper2005, Marie-Curie Conference "Making Europe more attractive for researchers", 28/09/2005Publication ESD data analysis software
; Tremouilles, DavidOral presentation2010, International Electrodischarge Workshop - IEWPublication ESD protection for sub-45nm MugFET technology
Proceedings paper2007-07, 14th IEEE International Symposium on the Physical and Failuire Analysis of Integrated Circuits - IPFA, 11/07/2007, p.159-164Publication Faster ESD device characterization with wafer-level HBM
Proceedings paper2007, 20th IEEE International Conference on Microelectronic Test Structures - ICMTS, 19/03/2007, p.93-96Publication Impact of CMOS Scaling and Technology Options on ESD Reliability
Oral presentation2005, MRS International Conference on Advanced Materials (IUMRS-ICAM)Publication Methodology for design optimization of SOI FinFET grounded-gate NMOS devices
Journal article2010, IEEE Transactions on Device and Materials Reliability, (10) 3, p.338-346Publication Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness
Proceedings paper2009, RCJ Symposium, 22/10/2009Publication RF ESD protection strategies - the design and performance trade-off challenges
Proceedings paper2005-09, Proceedings of the IEEE Custom Integrated Circuits Conference, 18/09/2005, p.489-496Publication RFCMOS ESD protection and reliability
Proceedings paper2005-06, Proceedings IEEE Internation Symposium on Physical and Failure Analysis - IPFA, 27/06/2005, p.59-66