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Browsing by Author "Tsai, W."

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    Approaching Fermi level unpinning in oxide-In0.2Ga0.8As

    Chiang, T.H.
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    Lee, W.C.
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    Lin, T.D.
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    Lin, Dennis  
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    Shiu, K.H.
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    Kwo, J.
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    Wang, W.E.
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    Tsai, W.
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    Hong, M.
    Proceedings paper
    2008, IEEE International Electron Devices Meeting - IEDM, 15/12/2008, p.375-378
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    Challenges in integration of metal gate high-k dielectrics gate stacks

    Tsai, W.
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    Ragnarsson, Lars-Ake  
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    Schram, Tom  
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    De Gendt, Stefan  
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    Heyns, Marc  
    Proceedings paper
    2004, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, 9/05/2004, p.321-327
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    High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies

    Caymax, Matty  
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    Bender, Hugo  
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    Brijs, Bert
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    Conard, Thierry  
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    De Gendt, Stefan  
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    Delabie, Annelies  
    Proceedings paper
    2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.47-58
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    Plasma modification of Hf based high-k dielectrics: effect of nitridation and silicon nitride deposition

    Tsai, W.
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    Maes, J.W.
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    De Witte, Hilde
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    Chen, J.
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    Delabie, Annelies  
    ;
    Carter, Richard
    Proceedings paper
    2004, Physics and Technology of High-k Gate Dielectrics II, 12/10/2003, p.37-46

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