Browsing by Author "Tseng, Peter"
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Publication Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties
Journal article2014, Journal of Physical Chemistry C, (118) 51, p.29492-29498Publication Enhanced photocatalytic activity of nanoroughened GaN by dry etching
Journal article2013, ECS Electrochemistry Letters, (2) 11, p.H51-H53Publication Enhanced photoelectrochemical activity of GaN by dry etching into nanopillar array
Meeting abstract2013, Electrochemical Society Spring meeting, 12/05/2013, p.453Publication Enhanced photoelectrochemical activity of GaN by dry etching into nanopillar array
Proceedings paper2013, Hydrogen Production, Conversion and Storage 4, 12/05/2013, p.29-35Publication GaN growth on patterned silicon substrates. A thermo mechanical study on wafer bow reduction
Proceedings paper2012, 13th Int. Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics - EuroSimE, 15/04/2012Publication H2 generation by solar water splitting using nanostructured GaN electrode
Oral presentation2012, International Workshop on Nitride Semiconductors - IWNPublication Indium rich III-nitrides on Germanium by molecular beam epitaxy
Proceedings paper2011, Compound Semiconductors for Energy Applications and Environmental Sustainability, 25/04/2011, p.1324-d01-03Publication Photoelectrochemical Study of n-GaN for Water Photoelectrolysis
Tseng, PeterPHD thesis2014-10Publication Single crystalline InxGa1-xN layers on germanium by molecular beam epitaxy
Journal article2013, CrystEngComm, (15) 44, p.9121-9127Publication Size-dependent strain relaxation in GaN nanopillars
Oral presentation2011, E-MRS Spring Meeting Symposium F: Group III Nitrides and their Heterostructures for Electronics and PhotonicsPublication Strain relaxation and distribution in GaN nanopillars using in-plane X-ray diffraction
Meeting abstract2012, E-MRS Spring Meeting Symposium W: Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III, 14/05/2012Publication Strain relaxation in GaN nanopillars
Journal article2012, Applied Physics Letters, (101) 25, p.253102Publication The impact of plasma-induced surface damage on photoelectrochemical properties of GaN pillars fabricated by dry etching
Journal article2014, Journal of Physical Chemistry C, 118, p.11261-11266