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Browsing by Author "Tyaginov, S. E."

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    A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs

    Illarionov, Yu. Yu.
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    Bina, M.
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    Tyaginov, S. E.
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    Rott, K.
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    Reisinger, H.
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    Kaczer, Ben  
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    Grasser, T.
    Proceedings paper
    2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.XT.13
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    Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology

    Makarov, A.
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    Tyaginov, S. E.
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    Kaczer, Ben  
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    Jech, M.
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    Vaisman Chasin, Adrian  
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    Grill, A.
    Proceedings paper
    2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.310-313
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    Mapping of CMOS FET degradation in bias space – Application to DRAM peripheral devices

    Kaczer, Ben  
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    Franco, Jacopo  
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    Tyaginov, S. E.
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    Jech, M.
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    Rzepa, G.
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    Grasser, T.
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    O'Sullivan, Barry  
    Journal article
    2017, Journal of Vacuum Science and Technology B, (35) 1, p.01A109

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