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Browsing by Author "Ulyashin, A.G."

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    A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high voltage applications

    Job, R.
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    Ulyashin, A.G.
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    Fahrner, W.R.
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    Niedernostheide, F.J.
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    Schulze, H. J.
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    Simoen, Eddy  
    Proceedings paper
    2002, Proceedings of the 11th International Workshop on Physics of Semiconductor Devices, 11/12/2001, p.405-413
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    Analysis of oxygen thermal donor formation in n-type CZ silicon

    Rafi, Joan Marc
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    Simoen, Eddy  
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    Claeys, Cor
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    Ulyashin, A.G.
    ;
    Job, R.
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    Fahrner, W.R.
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    Versluys, J.
    Proceedings paper
    2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 28/04/2003, p.96-105
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    Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

    Simoen, Eddy  
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    Claeys, Cor
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    Loo, Roger  
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    De Gryse, O.
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    Clauws, P.
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    Job, R.
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    Ulyashin, A.G.
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    Fahrner, W.
    Journal article
    2003, Materials Science and Engineering B, (102) 1_3, p.207-212
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    Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

    Simoen, Eddy  
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    Claeys, Cor
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    Job, R.
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    Ulyashin, A.G.
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    Fahrner, W.R.
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    Tonelli, G.
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    De Gryse, O.
    Journal article
    2003, Journal of the Electrochemical Society, (150) 9, p.G520-G526
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    Doping of oxidized float zone silicon by thermal donors- a low thermal budget doping method for device applications?

    Job, R.
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    Ulyashin, A.G.
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    Huang, Y.L.
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    Fahrner, W.R.
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    Simoen, Eddy  
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    Claeys, Cor
    Proceedings paper
    2002, Defect- and Impurity-Engineered Semiconductors and Devices III, 1/04/2002, p.F9.5
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    Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

    Simoen, Eddy  
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    Claeys, Cor
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    Job, R.
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    Ulyashin, A.G.
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    Fahrner, W.R.
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    De Gryse, O.
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    Clauws, P.
    Journal article
    2002, Applied Physics Letters, (81) 10, p.1842-1844
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    Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon

    Rafi, Joan Marc
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    Simoen, Eddy  
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    Claeys, Cor
    ;
    Ulyashin, A.G.
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    Job, R.
    ;
    Fahrner, W.R.
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    Versluys, J.
    Proceedings paper
    2002, Proceedings of the 5th Annual Workshop on Semiconductor Advances for Future Electronics - SAFE, 26/11/2002, p.91-98
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    Impact of direct plasma hydrogenation on thermal donor formation in N-type CZ silicon

    Rafi, Joan Marc
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    Simoen, Eddy  
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    Claeys, Cor
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    Huang, Y.L.
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    Ulyashin, A.G.
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    Job, R.
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    Versluys, J.
    Journal article
    2005, Journal of the Electrochemical Society, (152) 1, p.G16-G24
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    Low temperature doping of silicon by hydrogen plasma treatments

    Job, R.
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    Ulyashin, A.G.
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    Ma, Y.
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    Fahrner, W.R.
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    Simoen, Eddy  
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    Rafi, Joan Marc
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    Claeys, Cor
    Proceedings paper
    2002, High Purity Silicon VII, 20/10/2002, p.141-154
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    Modification of the effective minority carrier lifetime of silicon substrates by heat treatment and/or hydrogenation

    Ulyashin, A.G.
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    Scherff, M.
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    Job, R.
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    Fahrner, W.R.
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    Bilyalov, Renat
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    Poortmans, Jef  
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    Abrosimov, N.
    Oral presentation
    2003, 10th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology - GADEST
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    Overview of cell fabrication options for thin kerfless epi-Si foils: recent progress and challenges

    Sivaramakrishnan Radhakrishnan, Hariharsudan  
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    Cho, Jinyoun  
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    Xu, Menglei
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    Bearda, Twan
    Proceedings paper
    2018, 35th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC, 24/09/2018, p.2BP.1.3
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    Slim-cut technology using epoxy layer for photovoltaic application

    Bellanger, Pierre
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    Muller, D.
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    Roques, S.
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    Le Gall, Y.
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    Slaoui, A.
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    Serra, J.M.
    ;
    Ulyashin, A.G.
    Oral presentation
    2016, PV Days

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