Browsing by Author "Van Uffelen, Marco"
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Publication Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13um SiGe:C NPN HBT technology
; ; Publication Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI
Proceedings paper2007-01, EUROSOI Workshop Proceedings: 3rd Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits, 24/01/2007, p.23-24Publication Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETs
Journal article2010, IEEE Transactions on Nuclear Science, (57) 4, p.1771-1776Publication Influence of fin width on the total dose behavior of p-channe bulk MuGFETs
Journal article2010, IEEE Electron Device Letters, (31) 3, p.243-245Publication Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation
Proceedings paper2007, RADECS - 9th European Conference on Radiation and its Effects on Components and Systems, 10/09/2007