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Browsing by Author "Van der Heyden, Nikolaas"

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    A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

    Chang, Vincent
    ;
    Ragnarsson, Lars-Ake  
    ;
    Pourtois, Geoffrey  
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    O'Connor, Robert
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    Adelmann, Christoph  
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538
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    Oxygen-vacancy-induced Vt shift in La-containing devices

    O'Sullivan, Barry  
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    Mitsuhashi, Riichirou
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    Pourtois, Geoffrey  
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    Chang, Vincent
    Proceedings paper
    2007, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 19/09/2007, p.372-373
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    Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

    O'Sullivan, Barry  
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    Mitsuhashi, Riichirou
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    Pourtois, Geoffrey  
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    Aoulaiche, Marc
    ;
    Houssa, Michel  
    Journal article
    2008, Journal of Applied Physics, (104) 4, p.44500
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    Work function (WF) simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 capped high-k stacks

    Van der Heyden, Nikolaas
    ;
    Pourtois, Geoffrey  
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    De Gendt, Stefan  
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    Heyns, Marc  
    ;
    Stesmans, Andre  
    Proceedings paper
    2007, Physics and Technology of High-k Dielectrics, 7/10/2007, p.135-143

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