Browsing by Author "Vandersmissen, Raf"
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Publication A time- and frequency-domain characterization of a thin-film metamorphic HEMT under modulated backside illumination
Journal article2004, International Journal of RF and Microwave Computer-Aided Engineering, (14) 6, p.535-542Publication A time-domain RF characterisation of a thin-film metamorphic HEMT under modulated backside illumination
Proceedings paper2002, 59th Automatic RF Techniques Group (ARTFG) Conference, 7/06/2002Publication Accelerated ageing tests on metamorphic HEMTs on germanium
Oral presentation2001, Heterostructure Technology Workshop; 28-30 October 2001; Padova, Italy.Publication Accurate microwave large-signal model for thinned metamorphic HEMTs on germanium, aimed for low-power non-linear MCM-D circuit applications
Proceedings paper2001, GAAS - European Gallium Arsenide and other Semiconductors Application Symposium, 24/09/2001Publication AlGaN/GaN HEMT : when MOVPE meets the device challenge
Publication ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
Publication Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier MMIC
Proceedings paper2001, GAAS - European Gallium Arsenide and other Semiconductors Application Symposium, 24/09/2001Publication Development of extraction and optimization based large-signal models for thinned metamorphic high-electron mobility transistors on germanium
Journal article2002, International Journal of RF and Microwave Computer-Aided-Engineering, (12) 5, p.439-447Publication Embedded thin-film HEMTs in multi-chip modules
Proceedings paper2003, Proceedings URSI Forum, 18/12/2003, p.24-27Publication Embedded thin-films HEMTs in multi-chip modules
Journal article2004, HF Tijdschrift, 2, p.15-17Publication Feedback amplifier based on an embedded HEMT in thin-film multilayer technology
Proceedings paper2003, Proc. European GaAs and related III-V Compounds Applications Symposium (GAAS 2003), 6/10/2003, p.423-426Publication GaN for RF power amplifier : challenges and opportunities from material to System-in-a-Package
Oral presentation2005, RF & HYPER Europe, Power Amplifier WorkshopPublication Ge substrates, metamorphic HEMTs and hybrid integration
Vandersmissen, RafJournal article2001, Compound Semiconductor, (7) 9, p.57-59Publication Germanium devices: hybrid integration and substrate removal
Proceedings paper2001, GaAs MANTECH Conference. Digest of Papers; 21-24 May 2001; Las Vegas, NV, USA., p.85-88Publication High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Oral presentation2004, MRS Fall Meeting Symposium E: GaN, AlN, InN, and Their AlloysPublication High performant high-gain amplifiers based on metamorphic GaAs HEMTs
Proceedings paper2000, International Conference on Gallium-Arsenide MANufacturing TECHnology. GaAsMANTECH Conference. Digest of Papers; May 2000; Wash, p.229-232Publication Hybrid integration of multi-finger HEMTs: A comparison between flip-chip and substrate removal
Oral presentation2005, International Conference on Nitride SemiconductorsPublication Hybrid integration of thinned metamorphic HEMTs on Germanium
Oral presentation2000, 10th European Heterostructure Technology Workshop; September 18-19, 2000; Ulm, Germany.Publication Improvement of AlGaN/GaN high electron mobility transistor structures by in situ deposition of a Si3N4 layer
Journal article2005-09, Journal of Applied Physics, (98) 5, p.054501-1-054501-5Publication Influence of silicon nitride passivation on DC and behaviour of InP HEMTs
Proceedings paper2002, 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Appications - EDMOCMOVPE, 18/11/2002, p.172-176