Browsing by Author "Vellianitis, G."
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Publication Complex admittance analysis for La2Hf2O7/SiO2 high-kappa dielectric stacks
Journal article2004-01, Applied Physics Letters, (84) 2, p.260-262Publication HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition
;dimoulas, A. ;Mavrou, G. ;Vellianitis, G. ;Evangelou, E. ;Boukos, N.; Journal article2005, Applied Physics Letters, (86) 3, p.32908Publication HfO2 high-k gate dielectrics on germanium by molecular beam deposition
Oral presentation2004, Semiconductor Interface Specialists ConferencePublication MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
;Vellianitis, G. ;Apostolopoulos, G. ;Mavrou, G. ;Argyropoulos, K. ;dimoulas, A.Hooker, JacobJournal article2004-06, Materials Science & Engineering B (Solid-State Materials for Advanced, (B109) 1_3, p.85-88Publication Reliability degradation of HfSiO gate dielectric layers: influence of nitridation
Journal article2007, Microelectronic Engineering, (84) 9_10, p.1972-1975Publication Short minority carrier response time in HfO2/Ge metal-insulator-semiconductor capacitors
Journal article2005, Microelectronic Engineering, 80, p.34-37