Browsing by Author "Wilk, G.D."

Now showing 1 - 3 of 3

Gate oxide atomic layer deposition studied by in situ infrared spectroscopy

Frank, M.M.
;
Dörmann, S.
;
Chabal, Y.J.
;
Sayan, S.
;
Garfunkel, E.
;
Wilk, G.D.
;
Green, M.L.
Oral presentation
2003, E-MRS Spring Meeting Symposium I Functional Metal Oxides - Semiconductor Structures
Initial growth kinetics of ALD Al2O3 and HfO2 and post-annealing effects

Wilk, G.D.
;
Frank, M.
;
Ho, M.Y.
;
Green, Martin
;
Chabal, Y.J.
;
Raisanen, P.
;
Brijs, Bert
;
Sorsch, T.W.
Oral presentation
2002, Atomic Layer Deposition Conference - ALD
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)

Green, Martin
;
Ho, M.Y.
;
Busch, B.
;
Wilk, G.D.
;
Sorsch, T.
;
Conard, Thierry
;
Brijs, Bert
Journal article
2002, Journal of Applied Physics, (92) 12, p.7168-7172