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Browsing by Author "Wortman, J. J."

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    A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

    Yang, N.
    ;
    Henson, W. K.
    ;
    Wortman, J. J.
    Journal article
    2000, IEEE Trans. Electron Devices, (47) 8, p.1636-1644
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    Analysis of tunneling currents and reliability of NMOSFET's with sub-2 nm gate oxides

    Yang, N.
    ;
    Henson, W. K.
    ;
    Wortman, J. J.
    Proceedings paper
    1999, International Electron Devices Meeting. Technical digest; December 1999; Washington, D.C., p.453-456
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    Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFETs

    Henson, W. K.
    ;
    Yang, N.
    ;
    Wortman, J. J.
    Journal article
    1999, IEEE Electron Device Letters, (20) 12, p.605-607

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