Browsing by Author "Wortman, J. J."
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Publication A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides
;Yang, N. ;Henson, W. K.Wortman, J. J.Journal article2000, IEEE Trans. Electron Devices, (47) 8, p.1636-1644Publication Analysis of tunneling currents and reliability of NMOSFET's with sub-2 nm gate oxides
;Yang, N. ;Henson, W. K.Wortman, J. J.Proceedings paper1999, International Electron Devices Meeting. Technical digest; December 1999; Washington, D.C., p.453-456Publication Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFETs
;Henson, W. K. ;Yang, N.Wortman, J. J.Journal article1999, IEEE Electron Device Letters, (20) 12, p.605-607