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Browsing by Author "Wouters, Lennaert"

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    3D-carrier profiling and parasitic resistance analysis in vertically stacked gate-all-around Si nanowire CMOS transistors

    Eyben, Pierre  
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    Ritzenthaler, Romain  
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    De Keersgieter, An  
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    Chiarella, Thomas  
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    Veloso, Anabela  
    Proceedings paper
    2019, IEEE International Electron Devices Meeting - IEDM 2019, 7/12/2019, p.238-241
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    Advanced Current-Voltage Model of Electrical Contacts to GaAs- and Ge-Based Active Silicon Photonic Devices

    Hsieh, Ping-Yi  
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    O'Sullivan, Barry  
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    Tsiara, Artemisia  
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    Truijen, Brecht  
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    Lagrain, Pieter  
    Journal article
    2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 8, p.4274-4279
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    Apparent size effects on dopant activation in nanometer-wide Si fins

    Folkersma, Steven  
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    Bogdanowicz, Janusz  
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    Favia, Paola  
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    Wouters, Lennaert  
    Journal article
    2021, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, (39) 2, p.Art. 023202
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    Assessment of N-type and P-type doping in (Al,Ga)N heterostructures by Scanning probe microscopy techniques

    Minj, Albert  
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    Zhao, Ming  
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    Bakeroot, Benoit  
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    Paredis, Kristof  
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    Wouters, Lennaert  
    Oral presentation
    2021, MRS Spring 2021
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    Carrier profiling in high vacuum using Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

    Wouters, Lennaert  
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    Minj, Albert  
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    Celano, Umberto  
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    Hantschel, Thomas  
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    Paredis, Kristof  
    Journal article
    2020, Park Systems.com: Application Note #54, p.1-5
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    Combining TCAD and advanced metrology techniques to support device integration towards N3

    Eyben, Pierre  
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    De Keersgieter, An  
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    Celano, Umberto  
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    Wouters, Lennaert  
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    Chiarella, Thomas  
    Proceedings paper
    2021, 20th International Workshop on Junction Technology (IWJT), JUN 10-11, 2021, p.84-87
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    Electrical properties of extended defects in strain relaxed GeSn

    Gupta, Somya
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    Simoen, Eddy  
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    Loo, Roger  
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    Shimura, Yosuke
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    Gencarelli, Federica
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    Wouters, Lennaert  
    Journal article
    2018, Applied Physics Letters, (113) 2, p.22102
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    Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy

    Lagrain, Pieter  
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    Paulussen, Kris  
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    Grieten, Eva  
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    Van den Bosch, Geert  
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    Rachidi, Sana  
    Journal article
    2024, MICRO AND NANO ENGINEERING, (23) June, p.Art. 100247
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    Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

    Wan, Danny  
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    Manfrini, Mauricio  
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    Vaysset, Adrien
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    Souriau, Laurent  
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    Wouters, Lennaert  
    Journal article
    2018, Japanese Journal of Applied Physics, (57) 4S, p.04FN01
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    Hedgehog probe tips enabling high-resolution scanning probe microscopy

    Boehme, Thijs  
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    Hantschel, Thomas  
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    Wouters, Lennaert  
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    Folkersma, Steven  
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    Paredis, Kristof  
    Meeting abstract
    2019, 21st International Scanning Probe Microscopy (ISPM) Conference, 26/05/2019
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    Integration of interconnected magnetic tunnel junctions for spin torque majority gates

    Wan, Danny  
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    Manfrini, Mauricio  
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    Souriau, Laurent  
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    Sayan, Safak
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    Jussot, Julien  
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    Swerts, Johan  
    Proceedings paper
    2017, 49th International Conferece on Solid State Devices and Materials - SSDM, 19/09/2017
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    Local Enhancement of Dopant Diffusion from Polycrystalline Silicon Passivating Contacts

    Firat, Meric  
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    Wouters, Lennaert  
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    Lagrain, Pieter  
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    Haase, Felix
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    Polzin, Jana-Isabelle
    Journal article
    2022, ACS APPLIED MATERIALS & INTERFACES, (14) 15, p.17975-17986
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    Mapping conductance and carrier distributions in confined three-dimensional transistor structures

    Schulze, Andreas
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    Eyben, Pierre  
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    Mody, Jay
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    Paredis, Kristof  
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    Wouters, Lennaert  
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    Celano, Umberto  
    Book chapter
    2019
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    Mechanisms of high-pressure tip-induced material removal toward a tomographic AFM

    Celano, Umberto  
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    Pandey, Komal  
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    Wouters, Lennaert  
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    Paredis, Kristof  
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    van der Heide, Paul  
    Meeting abstract
    2018, Materials Research Society Spring Meeting 2018, 2/04/2018, p.CM01.09.02
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    Oil as an Enabler for Efficient Materials Removal in Three-Dimensional Scanning Probe Microscopy Applications

    Noel, Celine  
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    Wouters, Lennaert  
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    Paredis, Kristof  
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    Celano, Umberto  
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    Hantschel, Thomas  
    Journal article
    2021-12, FRONTIERS IN MECHANICAL ENGINEERING-SWITZERLAND, (7) 797962, p.1-8
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    Probe chip nanofabrication enabled reverse tip sample scanning probe microscopy concept and measurements

    Kim, Hyeon-Su  
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    Peric, Nemanja  
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    Minj, Albert  
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    Wouters, Lennaert  
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    Serron, Jill  
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    Mancini, Chiara  
    Journal article
    2024, NANOTECHNOLOGY, (35) 26, p.Art. 265703
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    Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes

    Celano, Umberto  
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    Hantschel, Thomas  
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    Boehme, Thijs  
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    Kanniainen, A.
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    Wouters, Lennaert  
    Proceedings paper
    2019, IEEE International Electron Devices Meeting - IEDM 2019, 7/12/2019, p.90-93
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    Self-patterned ultra-sharp diamond tips and their application for advanced nanoelectronics device characterization by electrical SPM

    Wouters, Lennaert  
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    Boehme, Thijs  
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    Mana, Luca  
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    Hantschel, Thomas  
    Journal article
    2023, MICRO AND NANO ENGINEERING, (19) June, p.Art. 100195
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    Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory

    Ramesh, Siva  
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    Vadakupudhu Palayam, Senthil  
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    Ajaykumar, Arjun  
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    Opsomer, Karl  
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    Bastos, Joao  
    Proceedings paper
    2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021
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    Understanding tip-induced nanoscale wear for tomographic atomic force microscopy

    Celano, Umberto  
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    Xiaoli, Hu
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    Pandey, Komal  
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    Wouters, Lennaert  
    ;
    Paredis, Kristof  
    Meeting abstract
    2019, AVS 66th International Symposium & Exhibition, 20/10/2019, p.NS-ThP8

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