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Browsing by Author "Xiang, Yang"

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    A BSIM-Based Predictive Hot-Carrier Aging Compact Model

    Xiang, Yang  
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    Tyaginov, Stanislav  
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    Vandemaele, Michiel  
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    Wu, Zhicheng  
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    Franco, Jacopo  
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    Bury, Erik  
    Proceedings paper
    2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021
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    A Direct-Capacitance-Conversion FeRAM Characterization Platform for Enabling Non-Destructive 3-D Ferroelectric Capacitor Readout

    Jiang, Xiongfei
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    Wang, Chaohan  
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    Xiang, Yang  
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    Wang, Shiwei  
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    Prodromakis, Themis  
    Journal article
    2026, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, (73) 4, p.403-407
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    A DTCO Framework for 3D NAND Flash Readout

    Gerardi, Mattia  
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    Sharma, Arvind  
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    Xiang, Yang  
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    Kaczmarek, Jakub  
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    Garcia Redondo, Fernando  
    Proceedings paper
    2024, 27th Design, Automation and Test in Europe Conference and Exhibition (DATE), MAR 25-27, 2024
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    Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors

    Verreck, Devin  
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    Verhulst, Anne  
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    Xiang, Yang  
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    Yakimets, Dmitry  
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    El Kazzi, Salim
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    Parvais, Bertrand  
    Journal article
    2018, IEEE Journal of the Electron Devices Society, 6, p.658-663
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    CFET SRAM DTCO, Interconnect Guideline, and Benchmark for CMOS Scaling

    Liu, Hsiao-Hsuan
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    Salahuddin, Shairfe Muhammad  
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    Chan, Boon Teik
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    Schuddinck, Pieter  
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    Xiang, Yang  
    Journal article
    2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 3, p.883-890
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    CFET SRAM With Double-Sided Interconnect Design and DTCO Benchmark

    Liu, Hsiao-Hsuan
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    Schuddinck, Pieter  
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    Pei, Zhenlin
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    Verschueren, Lynn  
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    Mertens, Hans  
    Journal article
    2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 10, p.5099-5106
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    Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM

    Xiang, Yang  
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    Mukherjee, Shankha  
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    Hellings, Geert  
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    Oh, Hyungrock  
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    Garcia Bardon, Marie  
    Journal article
    2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 8, p.4685-4691
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    Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics

    Xiang, Yang  
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    Garcia Bardon, Marie  
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    Kaczer, Ben  
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    Alam, Md Nur Kutubul  
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    Ragnarsson, Lars-Ake  
    Journal article
    2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 4, p.2107-2115
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    Design enablement of CFET devices for sub-2nm CMOS nodes

    Zografos, Odysseas  
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    Chehab, Bilal  
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    Schuddinck, Pieter  
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    Mirabelli, Gioele  
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    Kakarla, Naveen  
    Proceedings paper
    2022-05-19, 25th Design, Automation and Test in Europe Conference and Exhibition (DATE), MAR 14-23, 2022, p.29-33
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    Design Space Exploration of FeRAM Bit Cell for DRAM Application

    Oh, Hyungrock  
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    Xiang, Yang  
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    Garcia Redondo, Fernando  
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    Gupta, Mohit Kumar
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    Perumkunnil, Manu  
    Journal article
    2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 9, p.5380-5387
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    Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-Destructive Read

    Mukherjee, Shankha  
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    Bizindavyi, Jasper  
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    Popovici, Mihaela Ioana  
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    Clima, Sergiu  
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    Xiang, Yang  
    Journal article
    2025-APR, IEEE ELECTRON DEVICE LETTERS, (46) 4, p.576-579
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    Evaluation of Nanosheet and Forksheet Width Modulation for Digital IC Design in the Sub-3 nm Era

    Sisto, Giuliano  
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    Zografos, Odysseas  
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    Chehab, Bilal  
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    Kakarla, Naveen  
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    Xiang, Yang  
    Journal article
    2022, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, (30) 10, p.1497-1506
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    Future Design Direction for SRAM Data Array: Hierarchical Subarray With Active Interconnect

    Liu, Hsiao-Hsuan
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    Gilardi, Carlo
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    Salahuddin, Shairfe Muhammad  
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    Pei, Zhenlin
    Journal article
    2024, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, (71) 12, p.6495-6506
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    Gate oxide reliability: upcoming trends, challenges, and opportunities

    Kaczer, Ben  
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    Degraeve, Robin  
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    Franco, Jacopo  
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    Grasser, T.
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    Roussel, Philippe  
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    Bury, Erik  
    Proceedings paper
    2024, IEEE Silicon Nanoelectronics Workshop (SNW) / Symposium on VLSI Technology and Circuits, 2024-06-15, p.3-4
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    High-Density Standard Cell Libraries with Backside Power Options in A14 Nanosheet Node

    Kükner, Halil  
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    Mirabelli, Gioele  
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    Yang, Sheng  
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    Zhou, Yun  
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    Makarov, Alexander  
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    Xiang, Yang  
    Proceedings paper
    2024, Conference on DTCO and Computational Patterning III, FEB 26-29, 2024, p.1295409
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    Implication of Channel Percolation in Ferroelectric FETs for Threshold Voltage Shift Modeling

    Xiang, Yang  
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    Garcia Bardon, Marie  
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    Kaczer, Ben  
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    Alam, Md Nur Kutubul  
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    Ragnarsson, Lars-Ake  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020
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    Improved Capacitive Memory Window for Non-destructive Read in HZO-based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO

    Mukherjee, Shankha  
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    Bizindavyi, Jasper  
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    Clima, Sergiu  
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    Xiang, Yang  
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    Popovici, Mihaela Ioana  
    Proceedings paper
    2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07
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    Physical insights on steep slope FEFETs including nucleation-propagation and charge trapping

    Xiang, Yang  
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    Garcia Bardon, Marie  
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    Alam, Md Nur Kutubul  
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    Thesberg, Mischa
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    Kaczer, Ben  
    Proceedings paper
    2019, IEEE International Electron Devices Meeting (IEDM), 7/12/2019, p.510-513
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    PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch

    Roda Neve, César  
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    Schuddinck, Pieter  
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    Bufler, Fabian  
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    Xiang, Yang  
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    Farokhnejad, Anita  
    Proceedings paper
    2022-06, VLSI, June 12-17 2022
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    Process-induced power-performance variability in sub-5nm III-V tunnel FETs

    Xiang, Yang  
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    Verhulst, Anne  
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    Yakimets, Dmitry  
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    Parvais, Bertrand  
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    Mocuta, Anda
    Journal article
    2019-04, IEEE Transactions on Electron Devices, (66) 6, p.2802-2808
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