Browsing by Author "Xiang, Yang"
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Publication A BSIM-Based Predictive Hot-Carrier Aging Compact Model
; ; ; ; ; Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication A Direct-Capacitance-Conversion FeRAM Characterization Platform for Enabling Non-Destructive 3-D Ferroelectric Capacitor Readout
Journal article2026, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, (73) 4, p.403-407Publication A DTCO Framework for 3D NAND Flash Readout
Proceedings paper2024, 27th Design, Automation and Test in Europe Conference and Exhibition (DATE), MAR 25-27, 2024Publication Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors
; ; ; ; ;El Kazzi, SalimJournal article2018, IEEE Journal of the Electron Devices Society, 6, p.658-663Publication CFET SRAM DTCO, Interconnect Guideline, and Benchmark for CMOS Scaling
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 3, p.883-890Publication CFET SRAM With Double-Sided Interconnect Design and DTCO Benchmark
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 10, p.5099-5106Publication Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 8, p.4685-4691Publication Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 4, p.2107-2115Publication Design enablement of CFET devices for sub-2nm CMOS nodes
Proceedings paper2022-05-19, 25th Design, Automation and Test in Europe Conference and Exhibition (DATE), MAR 14-23, 2022, p.29-33Publication Design Space Exploration of FeRAM Bit Cell for DRAM Application
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 9, p.5380-5387Publication Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-Destructive Read
Journal article2025-APR, IEEE ELECTRON DEVICE LETTERS, (46) 4, p.576-579Publication Evaluation of Nanosheet and Forksheet Width Modulation for Digital IC Design in the Sub-3 nm Era
Journal article2022, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, (30) 10, p.1497-1506Publication Future Design Direction for SRAM Data Array: Hierarchical Subarray With Active Interconnect
Journal article2024, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, (71) 12, p.6495-6506Publication Gate oxide reliability: upcoming trends, challenges, and opportunities
Proceedings paper2024, IEEE Silicon Nanoelectronics Workshop (SNW) / Symposium on VLSI Technology and Circuits, 2024-06-15, p.3-4Publication High-Density Standard Cell Libraries with Backside Power Options in A14 Nanosheet Node
Proceedings paper2024, Conference on DTCO and Computational Patterning III, FEB 26-29, 2024, p.1295409Publication Implication of Channel Percolation in Ferroelectric FETs for Threshold Voltage Shift Modeling
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication Improved Capacitive Memory Window for Non-destructive Read in HZO-based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO
Proceedings paper2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07Publication Physical insights on steep slope FEFETs including nucleation-propagation and charge trapping
Proceedings paper2019, IEEE International Electron Devices Meeting (IEDM), 7/12/2019, p.510-513Publication PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch
Proceedings paper2022-06, VLSI, June 12-17 2022Publication Process-induced power-performance variability in sub-5nm III-V tunnel FETs
Journal article2019-04, IEEE Transactions on Electron Devices, (66) 6, p.2802-2808