Browsing by Author "Xiao, Dongping"
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Publication A load-pull wafer-mapper
Proceedings paper2008, IEEE MTT-S International Microwave Symposium Digest, 15/06/2008, p.113-119Publication AlGaN/GaN HEMT : when MOVPE meets the device challenge
Publication AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Publication Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs
Journal article2025, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, (73) 2, p.779-788Publication Analytical extraction of small and large signal models for FINFET varactors
Journal article2008, Solid-State Electronics, (52) 5, p.704-710Publication ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
Publication Detailed analysis of parasitic loading effects on power performance of GaN-on-Silicon HEMTs
Journal article2009-12, Solid-State Electronics, (53) 2, p.185-189Publication Determination and validation of new nonlinear FinFET model based on lookup ables
Journal article2007, IEEE Microwave and Wireless Components Letters, (17) 5, p.361-363Publication Efficiency enhancement of harmonic-tuned GaN power amplifier using Doherty like load modulation
Proceedings paper2008, IEEE Compound Semiconductor Integrated Circuits Symposium - CSICS, 12/10/2008Publication GaN for RF power amplifier : challenges and opportunities from material to System-in-a-Package
Oral presentation2005, RF & HYPER Europe, Power Amplifier WorkshopPublication GaN power amplifier design based on artificial neural network modelling
Proceedings paper2007, Proceedings of the 2nd European Microwave Integrated Circuits Conference - EuMIC, 8/10/2007, p.40-43Publication GaN technology on high-resistivity Si-substrates for high-power-amplifiers
; ; Cheng, KaiProceedings paper2008, ESA Microwave Technology and Techniques Workshop, 6/05/2008Publication High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Oral presentation2004, MRS Fall Meeting Symposium E: GaN, AlN, InN, and Their AlloysPublication III-Nitrides electronics at IMEC: latest developments on SiC and large diameter Si substrates
Proceedings paper2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.337-341Publication InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications
Proceedings paper2024, 50th IEEE European Solid-State Electronics Research Conference (ESSERC), SEP 09-12, 2024, p.241-244Publication Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz
Proceedings paper2024, IEEE/MTT-S International Microwave Symposium (IMS), JUN 16-21, 2024, p.948-951Publication MOVPE AlGaN/AlN/GaN HEMT with in-situ passivation
Proceedings paper2004-10, Proceedings of Workshop WS GAAS02: Wide Bandgap Research for Microwave Applications: materials, device & circuit issues, 13/10/2004, p.51-60Publication Small-signal model of GaN HEMTs including surface charging effect
Oral presentation2004, Workshop on Integrated Nonlinear Microwave and Millimeter Wave CircuitsPublication Surface stabilization for higher performance AlGaN/GaN HEMT with in-situ MOVPE SiN
Publication Transfer from MHEMT to GaN HEMT technology: devices and integration
Proceedings paper2005, International Conference on Compound Semiconductor Manufacturing Technology Conference (csmantech) Digest, 11/04/2005