Browsing by Author "Yang, Rui"
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Publication Defects and electrical performance of germanium PMOS devices
Meeting abstract2009, 215th Electrochemical Society Spring Meeting, 24/05/2009, p.717Publication Defects, junction leakage and electrical performance of Ge pFET devices
Proceedings paper2009, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-band CMOS. 5: New Material, Processing, and Equipment, 24/05/2009, p.195-205Publication Electrical characterization of germanium for advanced devices
Oral presentation2008, Summer School on Inorganic Functional MaterialsPublication Investigation of fired and non-fired Si-SiNx interface properties by deep-level transient spectroscopy measurements
Proceedings paper2009, MRS Fall Meeting Symposium Q: Photovoltaic Materials and Manufacturing Issues II, 30/11/2009, p.1210-Q05-04Publication Is there an impact of threading dislocations on the characteristics of devices fabricated in strained-Ge substrates?
Journal article2009, Physica Status Solidi C, (6) 8, p.1912-1917Publication On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions
Journal article2009, Journal of Applied Physics, (106) 7, p.74511Publication P+/N junction leakage in thin selectively grown Ge-in-STI substrates
Journal article2010, Thin Solid Films, (518) 9, p.2489-2492Publication P+/N junction leakage in thin selectively grown germanium-in-STI substrates
Oral presentation2009, E-MRS Spring Meeting Symposium I: Silicon and Germanium Issues for Future CMOS Devices