Browsing by Author "Yousif, M. Y. A."

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Behaviour of Poly-Si1-XGex-gated MOS capacitors under different electrical stress conditions in the direct tunnelling regime

Yousif, M. Y. A.
;
Willander, M.
;
Lundgren, P.
;
Caymax, Matty
Journal article
2001, Semiconductor Science and Technology, (16) 6, p.478-482
Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime

Yousif, M. Y. A.
;
Willander, M.
;
Lundgren, P.
;
Caymax, Matty
Proceedings paper
2000, Proceedings 8th Symposium on Microwave and Optoelectronic Applications High Performance Electron Devices; 13-14 November 2000; G, p.277
Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials

Jacob, A. P.
;
Myrberg, T.
;
Yousif, M. Y. A.
;
Nur, O.
;
Willander, M.
;
Lundgren, P.
;
Sveinbjörnson, E. Ö.
Proceedings paper
2002, XI International Workshop on Physics of Semiconductor Devices - IWPSD, 11/12/2001, p.1088-1095
On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS

Yousif, M. Y. A.
;
Friesel, M.
;
Willander, M.
;
Lundgren, P.
;
Caymax, Matty
Journal article
2000, Solid-State Electronics, (44) 8, p.1425-1429
p+poly-Si1-xGex gate material for future high-speed nanoscale CMOS circuits

Yousif, M. Y. A.
;
Willander, M.
;
Lundgren, P.
;
Caymax, Matty
Proceedings paper
2000, Proceedings GHz 2000 Symposium.; Gothenburg, Sweden., p.419