Browsing by Author "Zhang, Jian F."
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Publication Dominant layer for stress-induced positive charges in Hf-based gate stacks
; Pantisano, LuigiJournal article2008, IEEE Electron Device Letters, (29) 12, p.1360-1363Publication New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation
Journal article2013, IEEE Transactions on Electron Devices, (60) 8, p.2505-2511Publication Stress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defect
Journal article2008, IEEE Transactions on Electron Devices, (55) 7, p.1647-1656