Browsing by Author "Zhang, John"
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Publication Defects generation in SiO2/HfO2 studied with variable Tcharge-Tdischarge charge pumping (VT2CP)
Proceedings paper2007, 45th Annual International Reliability Physics Symposium, 15/04/2007, p.55-60Publication Impact of process conditions on interface and high-k trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)
Journal article2007-09, Microelectronic Engineering, (84) 9_10, p.1951-1955Publication Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks
Journal article2005-06, Microelectronic Engineering, 80, p.366-369