Browsing by Author "Zhang, Leqi"
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Publication A compact NBTI model for accurate analog integrated circuit reliability simulation
Proceedings paper2011, European Solid State Device Research Conference - ESSDERC, 12/09/2011, p.147-150Publication a-IGZO Schottky diode as selector for cross-point memory application
Oral presentation2014, 10th International Thin-Film Transistor Conference - ITFPublication a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability
; ; ; ; Proceedings paper2015, IEEE Symposium on VLSI Technology, 16/06/2015, p.132-133Publication Analysis of complementary RRAM switching
Journal article2012, IEEE Electron Device Letters, (33) 8, p.1186-1188Publication Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write
Proceedings paper2012, 42nd European Solid-State Device Research Conference - ESSDERC, 17/09/2012, p.282-285Publication Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design
Proceedings paper2013, 5th IEEE International Memory Workshop - IMW, 26/05/2013, p.155-158Publication Cell variability impact on the one-selector one-resistor cross-point array performance
Journal article2015, IEEE Transactions on Electron Devices, (62) 11, p.3490-3497Publication Direct evidence of the overshoot suppression in Ta2O5-based resistive switching memory with an integrated access resistor
Journal article2015, IEEE Electron Device Letters, (36) 10, p.1027-1029Publication High performance a-IGZO thin film diode as selector for cross-point memory application
Journal article2014, IEEE Electron Device Letters, (35) 6, p.642-644Publication High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance
; ; ; ; Proceedings paper2014, International Electronic Device Meeting - IEDM, 15/12/2014, p.164-167Publication High-performance metal-insulator-metal tunnel diode selectors
Journal article2014, IEEE Electron Device Letters, (35) 1, p.63-65Publication Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
Proceedings paper2013, International Electron Deives Meeting - IEDM, 9/12/2013, p.352-355Publication On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure
Journal article2013, IEEE Electron Device Letters, (34) 3, p.414-416Publication On the optimal On/Off resistance ratio for resistive switching element in one-selector one-resistor crosspoint arrays
Journal article2015, IEEE Electron Device Letters, 36, p.570-572Publication One-selector one-resistor cross-point array with threshold switching selector
Journal article2015, IEEE Transactions on Electron Devices, (62) 10, p.3250-3257Publication Performance and reliability of ultra-thin HfO2-based RRAM (UTO-RRAM)
Proceedings paper2013, 5th International Memory Workshop - IMW, 26/05/2013, p.48-51Publication RRAMs based on anionic and cationic switching: a short overview
Journal article2014, Physica Status Solidi. Rapid Research Letters, (8) 6, p.501-511Publication Selector design considerations and requirements for 1S1R RRAM crossbar array
Proceedings paper2014, IEEE 6th International Memory Workshop - IMW, 18/05/2014, p.1-4Publication Selectors for high density crosspoint memory arrays: design considerations, device implementations and some challenges ahead
Proceedings paper2015, International Conference on IC Design and Technology - ICICDT, 1/06/2015, p.1-4