Browsing by Author "Zhang, Weidong"

A Pragmatic Model to Predict Future Device Aging

Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations

Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells

Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel

Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations

Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals

Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks

RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism

Stochastic computing based on volatile GeSe ovonic threshold switching selectors

The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique