Browsing by Author "de Jamblinne de Meux, Albert"
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Publication A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard 5nm BEOL two-level metal flow
Proceedings paper2016, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 6/09/2016, p.43-46Publication A new look on the properties of oxygen vacancies in a-IGZO
Meeting abstract2015, E-MRS Fall Meeting Symposium G: Transparent Conductive Materials: from Fundamental Understanding to Applications, 15/09/2015Publication Ab-initio investigation of amorphous semiconductors
de Jamblinne de Meux, AlbertPHD thesis2018-03Publication Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects
Journal article2015, Journal of Physics D: Applied Physics, (48) 43, p.435104Publication Defects in amorphous semicondutors: the case of amorphous-Indium-Gallium-Zinc-Oxide
Journal article2018, Physical Review Applied, (9) 5, p.54039Publication Effect of high oxygen partial pressure on carrier transport mechanism in a-InGaZnO TFTs
Journal article2018, IEEE Transactions on Electron Devices, (65) 7, p.2833-2837Publication Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
Journal article2017, Journal of Applied Physics, (123) 16, p.161513Publication Flexible metal-oxide thin film transistor circuits for RFID and health patches
Proceedings paper2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.151-154Publication Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO
Journal article2016, Physical Review B, (93) 19, p.195204Publication Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications
Journal article2016, Advanced Materials, (28) 22, p.4266-4282Publication Method to quantify the delocalization of the electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors
Journal article2018, Physical Review B, (97) 4, p.45208Publication On the origin of NBS and NBIS in amorphous IGZO
Proceedings paper2017, 17th International Meeting on Information Display - IMID, 28/08/2017, p.1-5Publication Origin of the apparent delocalization of the conduction band in high mobility amorphous semiconductors
Journal article2017, Journal of Physics: Condensed Matter, (29) 25, p.255702Publication Oxygen vacancies effects in aIGZO: Formation mechanisms, hysteresis, and negative bias stress effects
Journal article2017, Physica Status Solidi A, (214) 6, p.1600889Publication Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
Proceedings paper2017, Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar, 1/10/2017, p.303-311Publication Properties of oxide-semiconductor TFTs under mechanical strain for flexible electronics
Proceedings paper2015, International Display Workshops, 9/12/2015Publication Reevaluation of the origin of negative bias stress with and without light exposition in amorphous Indium-Gallium-Zinc-Oxide
Oral presentation2016, E-MRS Sping Meeting