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Browsing by Author "de Jamblinne de Meux, Albert"

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    A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard 5nm BEOL two-level metal flow

    Clark, William
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    Juncker, Aurelie
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    Paladugu, E.
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    Fried, David
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    Wilson, Chris  
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    Pourtois, Geoffrey  
    Proceedings paper
    2016, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 6/09/2016, p.43-46
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    A new look on the properties of oxygen vacancies in a-IGZO

    de Jamblinne de Meux, Albert
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    Pourtois, Geoffrey  
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    Genoe, Jan  
    ;
    Heremans, Paul  
    Meeting abstract
    2015, E-MRS Fall Meeting Symposium G: Transparent Conductive Materials: from Fundamental Understanding to Applications, 15/09/2015
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    Ab-initio investigation of amorphous semiconductors

    de Jamblinne de Meux, Albert
    PHD thesis
    2018-03
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    Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

    de Jamblinne de Meux, Albert
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    Pourtois, Geoffrey  
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    Genoe, Jan  
    ;
    Heremans, Paul  
    Journal article
    2015, Journal of Physics D: Applied Physics, (48) 43, p.435104
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    Defects in amorphous semicondutors: the case of amorphous-Indium-Gallium-Zinc-Oxide

    de Jamblinne de Meux, Albert
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    Pourtois, Geoffrey  
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    Genoe, Jan  
    ;
    Heremans, Paul  
    Journal article
    2018, Physical Review Applied, (9) 5, p.54039
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    Effect of high oxygen partial pressure on carrier transport mechanism in a-InGaZnO TFTs

    Hung, Mai Phi
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    Chare, Christopher  
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    Nag, Manoj  
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    de Jamblinne de Meux, Albert
    ;
    Genoe, Jan  
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 7, p.2833-2837
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    Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO

    de Jamblinne de Meux, Albert
    ;
    Pourtois, Geoffrey  
    ;
    Genoe, Jan  
    ;
    Heremans, Paul  
    Journal article
    2017, Journal of Applied Physics, (123) 16, p.161513
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    Flexible metal-oxide thin film transistor circuits for RFID and health patches

    Heremans, Paul  
    ;
    Papadopoulos, Nikolas  
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    de Jamblinne de Meux, Albert
    ;
    Nag, Manoj  
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    Steudel, Soeren
    Proceedings paper
    2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.151-154
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    Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    Fishchuk, Ivan
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    Kadashchuk, Andriy  
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    Bhoolokam, Ajay
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    de Jamblinne de Meux, Albert
    Journal article
    2016, Physical Review B, (93) 19, p.195204
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    Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications

    Heremans, Paul  
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    Tripathi, Ashutosch
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    de Jamblinne de Meux, Albert
    ;
    Smits, Edsger
    ;
    Hou, Bo
    Journal article
    2016, Advanced Materials, (28) 22, p.4266-4282
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    Method to quantify the delocalization of the electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors

    de Jamblinne de Meux, Albert
    ;
    Pourtois, Geoffrey  
    ;
    Genoe, Jan  
    ;
    Heremans, Paul  
    Journal article
    2018, Physical Review B, (97) 4, p.45208
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    On the origin of NBS and NBIS in amorphous IGZO

    Heremans, Paul  
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    de Jamblinne de Meux, Albert
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    Bhoolokam, Ajay
    ;
    Pourtois, Geoffrey  
    Proceedings paper
    2017, 17th International Meeting on Information Display - IMID, 28/08/2017, p.1-5
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    Origin of the apparent delocalization of the conduction band in high mobility amorphous semiconductors

    de Jamblinne de Meux, Albert
    ;
    Pourtois, Geoffrey  
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    Genoe, Jan  
    ;
    Heremans, Paul  
    Journal article
    2017, Journal of Physics: Condensed Matter, (29) 25, p.255702
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    Oxygen vacancies effects in aIGZO: Formation mechanisms, hysteresis, and negative bias stress effects

    de Jamblinne de Meux, Albert
    ;
    Bhoolokam, Ajay
    ;
    Pourtois, Geoffrey  
    ;
    Genoe, Jan  
    ;
    Heremans, Paul  
    Journal article
    2017, Physica Status Solidi A, (214) 6, p.1600889
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    Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations

    Pourtois, Geoffrey  
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    Dabral, Ashish  
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    Sankaran, Kiroubanand  
    ;
    Magnus, Wim  
    ;
    Yu, Hao  
    Proceedings paper
    2017, Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar, 1/10/2017, p.303-311
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    Properties of oxide-semiconductor TFTs under mechanical strain for flexible electronics

    Heremans, Paul  
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    de Jamblinne de Meux, Albert
    ;
    Tripathi, Ashutosh
    ;
    Steudel, Soeren
    Proceedings paper
    2015, International Display Workshops, 9/12/2015
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    Reevaluation of the origin of negative bias stress with and without light exposition in amorphous Indium-Gallium-Zinc-Oxide

    de Jamblinne de Meux, Albert
    ;
    Pourtois, Geoffrey  
    ;
    Genoe, Jan  
    ;
    Heremans, Paul  
    Oral presentation
    2016, E-MRS Sping Meeting

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