Browsing by author "Degroote, Stefan"
Now showing items 1-20 of 101
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A load-pull wafer-mapper
Vanaverbeke, Fre; Vaesen, Kristof; Xiao, Dongping; Pauwels, Luc; De Raedt, Walter; Germain, Marianne; Degroote, Stefan; Das, Jo; Derluyn, Joff; Schreurs, Dominique (2008) -
AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Balachander, Krishnan; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Balachander, Krishnan; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
AlGaN/GaN HEMT : when MOVPE meets the device challenge
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Cheng, Kai; Degroote, Stefan; Derluyn, Joff; Das, Johan; Vandersmissen, Raf; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Degroote, Stefan; Xiao, Dongping; Lorenz, Anne; Boeykens, Steven; Germain, Marianne; Borghs, Gustaaf (2007-01) -
AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Srivastava, Puneet; Das, Jo; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Malinowski, Pawel; Kang, Xuanwu; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf; Mertens, Robert; Germain, Marianne (2010) -
AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
Visalli, Domenica; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Van Hove, Marleen; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2009) -
AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
Cheng, Kai; Degroote, Stefan; Leys, Maarten; Medjdoub, Farid; Derluyn, Joff; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2011) -
An initial exploration of GaN growth on Ge-(111) substrate
Zhang, Y.; McAleese, C.; Xiu, H.; Humphreys, C.J.; Lieten, Ruben; Degroote, Stefan; Borghs, Gustaaf (2008) -
ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
Germain, Marianne; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Boeykens, Steven; Derluyn, Joff; Das, Johan; Ruythooren, Wouter; Vandersmissen, Raf; Schreurs, Dominique; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
Cheap virtual germanium substrates by CSVT deposition on porous silicon
Flamand, Giovanni; Degroote, Stefan; Dessein, Kristof; Poortmans, Jef (2005) -
Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Wang, Wenfei; Derluyn, Joff; Germain, Marianne; De Wolf, Ingrid; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Ruythooren, Wouter; Das, Johan; Schreurs, Dominique; Nauwelaers, Bart; Borghs, Gustaaf (2005) -
Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
Cheng, Kai; Leys, Maarten; Dekoster, Johan; Degroote, Stefan (2010) -
Controlled III/V nanowire growth by selective-area vapor-phase epitaxy
Cantoro, Mirco; Brammertz, Guy; Richard, Olivier; Bender, Hugo; Clemente, Francesca; Leys, Maarten; Degroote, Stefan; Caymax, Matty; Heyns, Marc; De Gendt, Stefan (2009) -
Controlled III/V nanowire growth by selective-area vapour phase epitaxy
Cantoro, Mirco; Brammertz, Guy; Richard, Olivier; Clemente, Francesca; Leys, Maarten; Degroote, Stefan; Caymax, Matty; Heyns, Marc; De Gendt, Stefan (2009) -
Controlled, selective III, V nanowire heteroepitaxy
Cantoro, Mirco; Brammertz, Guy; Leys, Maarten; Degroote, Stefan; Heyns, Marc; De Gendt, Stefan (2009) -
Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Boeykens, Steven; Derluyn, Joff; Germain, Marianne; Engelen, Jan; Borghs, Gustaaf (2005)