Browsing by author "Karner, M."
Now showing items 1-7 of 7
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A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics
Schanovsky, F.; Rzepa, G.; Stanojevic, Z.; Kernstock, C.; Baumgartner, O.; Karner, M.; Verreck, Devin; Arreghini, Antonio; Rosmeulen, Maarten (2021) -
Modeling the Operation of Charge Trap Flash Memory–Part I: The Importance of Carrier Energy Relaxation
Schanovsky, F.; Verreck, Devin; Stanojevic, Z.; Schallert, S.; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten; Karner, M. (2024) -
Monolithic TCAD simulation of phase-change memory (PCM/PRAM) plus Ovonic Threshold Switch (OTS) selector device
Thesberg, M.; Stanojevic, Z.; Baumgartner, O.; Kernstock, C.; Leonelli, D.; Barci, M.; Wang, X.; Zhou, X.; Jiao, H.; Donadio, Gabriele Luca; Garbin, Daniele; Witters, Thomas; Kundu, Shreya; Hody, Hubert; Delhougne, Romain; Kar, Gouri Sankar; Karner, M. (2023) -
Physical modeling of NBTI: from individual defects to devices
Rzepa, G.; Goes, W.; Rott, G.; Rott, K.; Karner, M.; Kernstock, C.; Kaczer, Ben; Reisinger, H.; Grasser, T. (2014) -
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies
Rzepa, G.; Karner, M.; Baumgartner, O.; Strof, G.; Schanovsky, F.; Mitterbauer, F.; Kernstock, C.; Karner, H. W.; Stanojevic, Z.; Weckx, Pieter; Hellings, Geert; Claes, Dieter; Wu, Zhicheng; Xiang, Yang; Chiarella, Thomas; Parvais, Bertrand; Mitard, Jerome; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri (2021) -
Simulation of rReliability of nanoscale devices
Bina, Markus; Triebl, O.; Karner, M.; Kaczer, Ben; Grasser, Tibor (2012) -
Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling
Verreck, Devin; Arreghini, Antonio; Schanovsky, F.; Rzepa, G.; Stanojevic, Z.; Mitterbauer, F.; Kernstock, C.; Baumgartner, O.; Karner, M.; Van den Bosch, Geert; Rosmeulen, Maarten (2021)