Browsing by author "Fleetwood, D.M."
Now showing items 1-9 of 9
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Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
Heavy ion and laser induced charge collection in SiGe bulk PMOSFETs
Zhang, E.X.; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Funkhouser, E.D.; Kai, N.; Ball, D.R.; McCurdy, M.W.; Fleetwood, D.M.; Reed, R.A.; Alles, M.C.; Schrimpf, R.D.; Linten, Dimitri; Mitard, Jerome (2014) -
Heavy ion and laser-induced transients in SiGe channel pMOSFETs
Zhang, E.X.; Samsel, I.K.; Bennett, W.G.; Hooten, N.C.; McCurdy, M.; Fleetwood, D.M.; Reed, R.A.; Alles, M.L.; Schrimpf, R.D.; Weller, R.A.; Linten, Dimitri; Mitard, Jerome (2013) -
Heavy-ion-induced current transients in bulk and SOI FinFETs
El-Mamouni, F.; Zhang, X.; Ball, D.R.; Sierawski, B.; King, M.P.; Schrimpf, R.D.; Reed, R.A.; Alles, M.L.; Fleetwood, D.M.; Linten, Dimitri; Simoen, Eddy; Vizkelethy, G. (2012) -
Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
Mahatme, N.; Zhang, E.; Reed, R.A.; Bhuva, B.L.; Schrimpf, R.D.; Fleetwood, D.M.; Linten, Dimitri; Simoen, Eddy; Griffoni, Alessio; Aoulaiche, Marc; Jurczak, Gosia; Groeseneken, Guido (2012) -
Negative bias temperature instabilities in SiGe-pMOSFETs with SiO2/HfO2 gate dielectrics
Duan, G.X; Zhang, C. X.; Zhang, E.X.; Fleetwood, D.M.; Schrimpf, R.D; Reed, R. A.; Linten, Dimitri; Mitard, Jerome (2013) -
Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
Wang, L.; Zhang, E.X.; Zhang, C.X.; Duan, G.X.; Schrimpf, R.D.; Fleetwood, D.M.; Reed, R.A.; Samsel, I.K.; Hachtel, J.; Alles, M.L.; Witters, Liesbeth; Collaert, Nadine; Linten, Dimitri; Mitard, Jerome; Pantelides, S.T.; Galloway, K.F. (2015) -
Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs
Mahatme, Nihaar; Zhang, E.X.; Linten, Dimitri; Griffoni, A.; Aoulaiche, Marc; Simoen, Eddy; Jurczak, Gosia; Bhuva, B.L.; Reed, R.A.; Schrimpf, R.D.; Fleetwood, D.M.; Groeseneken, Guido (2012) -
Total-ionizing-dose response of hghly-scaled gate-all-around Si nanowire CMOS transistors
Gorchichko, Maria; Zhang, E.X.; Wang, P.; Schrimpf, R.; Reed, R.; Fleetwood, D.M.; Bonaldo, S.; Linten, Dimitri; Mitard, Jerome (2020)