Browsing by author "Stoffels, Steve"
Now showing items 1-20 of 141
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200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2017) -
3-D device electrothermal simulation for analysis of multifinger power HEMTs
Chvála, Ale; Marek, Juraj; Satka, Alexander; Priesol, Juraj; Príbytnŭ, Patrik; Donoval, Daniel; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2018) -
A modeling and experimental method for accurate thermal analysis of AlGan/GaN HEMT power-bars
Sodan, Vice; Stoffels, Steve; Oprins, Herman; Baelmans, Martine; Decoutere, Stefaan; De Wolf, Ingrid (2015) -
A novel gap narrowing process for creating high aspect ratio transduction gaps for MEM HF resonators
Stoffels, Steve; Bryce, George; Van Hoof, Rita; Du Bois, Bert; Mertens, Robert; Puers, Bob; Tilmans, Harrie; Witvrouw, Ann (2008) -
A novel gap narrowing process for creating high aspect ratio transduction gaps for MEM HF resonators
Stoffels, Steve; Bryce, George; Van Hoof, Rita; Du Bois, Bert; Mertens, Robert; Puers, Bob; Tilmans, Harrie; Witvrouw, Ann (2009) -
AlGaN/GaN field effect transistors for power electronics – Effect of finite GaN layer thickness on thermal characteristics
Hodges, Chris; Anaya Calvo, J.; Stoffels, Steve; Marcon, Denis; Kubal, Martin (2013-11) -
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation
Marino, F.A.; Bisi, D.; Meneghini, M.; Verzellesi, G.; Zanoni, E.; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, G. (2015) -
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
Bakeroot, Benoit; Stockman, Arno; Posthuma, Niels; Stoffels, Steve; Decoutere, Stefaan (2018) -
Architecture choice for radiation-hard AlGaN/GaN HEMT power devices
Wellekens, Dirk; Stoffels, Steve; Luu, Aurore; Haussy, Magali; Mélotte, Michel; Agten, Dries; Decoutere, Stefaan (2017) -
Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance
Marcon, Denis; Viaene, John; Stoffels, Steve; Vanaverbeke, Fre; Kang, Xuanwu; Lenci, Silvia; Srivastava, Puneet; Decoutere, Stefaan (2012) -
Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics
Lenci, Silvia; Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; Boulay, Sanae; Stoffels, Steve; Geens, Karen; Zahid, Mohammed; Decoutere, Stefaan (2012) -
Breakdown investigation in GaN-based MIS-HEMT devices
Marino, Fabio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, Gaudio (2014) -
Circular MEM resonator: modeling second order effects on resonance frequency
Nada, Yasseen; Stoffels, Steve; Tilmans, Harrie; Hegazi, E.; Ragai, H.F.; Shaarawi, A.M. (2008-04) -
CMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate
Van Hove, Marleen; Boulay, Sanae; Bahl, Sandeep; Stoffels, Steve; Kang, Xuanwu; Wellekens, Dirk; Geens, Karen; Delabie, Annelies; Decoutere, Stefaan (2012) -
Comparison of AlGaN/GaN MISHEMT powerbar designs
Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2014-02)