Browsing by author "Saripalli, Yoga"
Now showing items 1-20 of 24
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200mm GaN-on-Si epitaxy and e-mode device technology
Marcon, Denis; Saripalli, Yoga; Decoutere, Stefaan (2015) -
AlN/AlGaN/GaN wafer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs
Kandaswamy, Prem Kumar; Liang, Hu; Zhao, Ming; Saripalli, Yoga; Porter Carlson, Eric; Thapa, Sarad Bahadur; Van Hove, Marleen; Richard, Olivier; De Vos, Brecht; Vancoille, Eric; Dutta, Barundeb (2014) -
Analysis of point defect distributions in AlGaN/GaN heterostructures via spectroscopic photo current-voltage measurements
Ozden, Burcu; Khanal, Min P; Youn, Suhyeon; Mirkhani, Vahid; Yapabandara, Kosala; Park, Minseo; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Saripalli, Yoga (2016) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Novak, Tomas; Van Hove, Marleen; Stoffels, Steve; De Jaeger, Brice; Posthuma, Niels; Marcon, Denis; Decoutere, Stefaan; Langer, Robert (2015) -
Gallium nitride epitaxy on large area silicon substrates for power and optoelectronic applications
Saripalli, Yoga; Marcon, Denis (2015) -
GaN-on-Si process defect detection and analysis for HB-LEDs and power devices
Halder, Sandip; Stiers, Karen; Kandaswamy, Prem Kumar; Rosmeulen, Maarten; Carbonell, Laure; Saripalli, Yoga; Osman, Haris; Rosseel, Erik; Mani, Antonio; Hu, Qiona; Vedula, Srinivas; Polli, Marco (2013) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Posthuma, Niels; Heuken, Michael (2016) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Heuken, Michael (2016) -
Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Zhao, Ming; Saripalli, Yoga; Kandaswamy, Prem Kumar; Liang, Hu; Firrincieli, Andrea; Decoutere, Stefaan; Vancoille, Eric (2014) -
Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Zhao, Ming; Saripalli, Yoga; Kandaswamy, Prem Kumar; Liang, Hu; Firrincieli, Andrea; Decoutere, Stefaan; Vancoille, Eric (2013) -
Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates
Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George (2016) -
Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates
Su, Jie; Posthuma, Niels; Wellekens, Dirk; Saripalli, Yoga; Decoutere, Stefaan; Arif, Ronald; Papasouliotis, George (2016) -
Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE
Liang, Hu; Saripalli, Yoga; Van Hove, Marleen; Kang, Xuanwu; Vrancken, Evi; Zhao, Ming; Kandaswamy, Prem Kumar; Decoutere, Stefaan; Langer, Robert (2014) -
Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate
Liang, Hu; Saripalli, Yoga; Kandaswamy, Prem Kumar; Carlson, Eric Porter; Favia, Paola; Richard, Olivier; Bender, Hugo; Zhao, Ming; Thapa, Sarad Bahadur; Vancoille, Eric (2014) -
Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Posthuma, Niels; You, Shuzhen; Liang, Hu; Ronchi, Nicolo; Kang, Xuanwu; Wellekens, Dirk; Saripalli, Yoga; Decoutere, Stefaan (2016) -
MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)
Zhao, Ming; Priesol, Juraj; Satka, Alexander; Janicki, Lukasz; Baranowski, Michal; Misiewicz, Jan; Kudrawiec, Robert; Saripalli, Yoga (2016) -
MOCVD growth of DH-HEMT buffers with low-temperature ALN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2015) -
MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2016) -
MOCVD growth of highly-resistive carbon-doped GaN on 200 mm silicon
Jie, Su; Eric, Armour; Balakrishnan, Krishnan; Van Hove, Marleen; Saripalli, Yoga; Paranjpe, Ajit; Papasouliotis, George (2014)