Browsing by author "Rack, Martin"
Now showing items 1-6 of 6
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Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity
Cardinael, Pieter; Yadav, Sachin; Rack, Martin; Peralagu, Uthayasankaran; Alian, AliReza; Parvais, Bertrand; Collaert, Nadine; Raskin, Jean-Pierre (2024) -
Fast and accurate modeling of large TSV arrays in 3D-ICs using a 3D circuit model validated against full-wave FEM simulations and RF measurements
Rack, Martin; Raskin, J.P.; Sun, Xiao; Van der Plas, Geert; Absil, Philippe; Beyne, Eric (2016) -
Investigation of TSV noise coupling in 3D-ICs using an experimental validated 3D TSV circuit model including Si substrate effects and TSV capacitance inversion behavior after wafer thinning
Sun, Xiao; Rack, Martin; Van der Plas, Geert; Stucchi, Michele; De Vos, Joeri; Absil, Philippe; Raskin, J.P.; Beyne, Eric (2016) -
Modeling and Characterization of TSV-Induced Noise Coupling
Sun, Xiao; Rack, Martin; Van der Plas, Geert; Raskin, Jean-Pierre; Beyne, Eric (2018) -
Modeling the effect of charges in the back side passivation layer on through silicon via (TSV) capacitance after wafer thinning
Rack, Martin; Stucchi, Michele; Sun, Xiao; Roda Neve, Cesar; Van der Plas, Geert; Beyne, Eric; Absil, Philippe; Raskin, J-P (2015) -
Time Dependence of RF Losses in GaN-on-Si Substrates
Cardinael, Pieter; Yadav, Sachin; Zhao, Ming; Rack, Martin; Lederer, Dimitri; Collaert, Nadine; Parvais, Bertrand; Raskin, Jean-Pierre (2022-04-11)