Browsing by author "Van Houdt, Jan"
Now showing items 161-180 of 358
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Impact of charge trapping layer thickness and new trade-off in performance characteristics of 3-D SONOS devices
Arreghini, Antonio; Kar, Gouri Sankar; Van den Bosch, Geert; Van Houdt, Jan (2013) -
Impact of charge trapping on imprint and its recovery in HfO2 based FeFET
Higashi, Yusuke; Ronchi, Nicolo; Kaczer, Ben; Banerjee, Kaustuv; McMitchell, Sean; O'Sullivan, Barry; Clima, Sergiu; Minj, Albert; Celano, Umberto; Di Piazza, Luca; Suzuki, Masamichi; Linten, Dimitri; Van Houdt, Jan (2019) -
Impact of EUV lithography line edge roughness on 16 nm memory generation
Vaglio Pret, Alessandro; Poliakov, Pavel; Bianchi, Davide; Gronheid, Roel; Blomme, Pieter; Miranda Corbalan, Miguel; Van Houdt, Jan; Dehaene, Wim (2011) -
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells
Ali, T.; Kuehnel, K.; Czernohorsky, M.; Rudolph, M.; Paetzold, B.; Olivo, R.; Lehninger, D.; Mertens, K.; Mueller, F.; Lederer, M.; Hoffmann, R.; Mart, C.; Kalkani, M. N.; Steinke, P.; Kaempfe, T.; Mueller, J.; Seidel, K.; Eng, L. M.; Van Houdt, Jan (2020) -
Impact of interface layer on charge trapping in Si:HfO2 based FeF FT
Jung, Taehwan; O'Sullivan, Barry; Ronchi, Nicolo; Linten, Dimitri; Shin, Changhwan; Van Houdt, Jan (2020) -
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
Jung, Taehwan; O'Sullivan, Barry J.; Ronchi, Nicolo; Linten, Dimitri; Shin, Changhwan; Van Houdt, Jan (2021) -
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices
Maconi, Alessadro; Arreghini, Antonio; Monzio Compagnoni, Christian; Van den Bosch, Geert; Spinelli, Alessandro S.; Van Houdt, Jan; Lacaita, Andrea Leonardo (2011) -
Impact of line edge roughness on cell-to-cell coupling variability in NAND flash arrays
Poliakov, Pavel; Blomme, Pieter; Miranda Corbalan, Miguel; Anchlia, Ankur; Dobrovolny, Petr; Brusamarello, Lucas; Stucchi, Michele; Van Houdt, Jan; Dehaene, Wim (2010-03) -
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory
Kruv, Anastasiia; McMitchell, Sean; Clima, Sergiu; Okudur, Oguzhan Orkut; Ronchi, Nicolo; Van den Bosch, Geert; Gonzalez, Mario; De Wolf, Ingrid; Van Houdt, Jan (2021) -
Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions
Wu, Jackson; Kim, Woojin; Rao, Siddharth; Garello, Kevin; Van Beek, Simon; Couet, Sebastien; Liu, Enlong; Swerts, Johan; Kundu, Shreya; Souriau, Laurent; Yasin, Farrukh; Crotti, Davide; Jochum, Johanna; Van Bael, Margriet; Van Houdt, Jan; Groeseneken, Guido; Kar, Gouri Sankar (2018-10) -
Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells
Zheng, X.F.; Zhang, W.D.; Govoreanu, Bogdan; Zhang, J.F.; Van Houdt, Jan (2009) -
Impact of temperature on the switching behavior of scaled perpendicular magnetic tunnel junctions
Wu, Jackson; Kim, Woojin; Rao, Siddharth; Garello, Kevin; Couet, Sebastien; Liu, Enlong; Swerts, Johan; Kundu, Shreya; Souriau, Laurent; Yasin, Farrukh; Crotti, Davide; Kar, Gouri Sankar; Jochum, Johanna; Van Bael, Margriet; Van Houdt, Jan; Groeseneken, Guido (2017) -
Impact of the high-temperature process steps on the HfAIO interpoly dielectric stacks for nonvolatile memory applications
Ruiz Aguado, Daniel; Govoreanu, Bogdan; Favia, Paola; De Meyer, Kristin; Van Houdt, Jan (2008-03) -
Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory
Ali, Tarek; Mertens, Konstantin; Olivo, Ricardo; Rudolph, Matthias; Oehler, Sebastian; Kuhnel, Kati; Lehninger, David; Muller, Franz; Hoffmann, Raik; Schramm, Philipp; Biedermann, Kati; Metzger, Joachim; Binder, Robert; Czernohorsky, Malte; Kampfe, Thomas; Muller, Johannes; Seidel, Konrad; Van Houdt, Jan; Eng, Lukas M. (2021) -
Impact of top and bottom conductive lyers on electrical and material properties of ferroelectric aluminum doped HfO2
Florent, Karine; Popovici, Mihaela Ioana; Lavizzari, Simone; Di Piazza, Luca; Groeseneken, Guido; Van Houdt, Jan (2016) -
Impact of tunnel-oxide nitridation on endurance and read-disturb characteristics of flash E2PROM devices
De Blauwe, Jan; Wellekens, Dirk; Van Houdt, Jan; Degraeve, Robin; Haspeslagh, Luc; Groeseneken, Guido; Maes, Herman (1997) -
Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal-Ferroelectric-Insulator-Semiconductor Capacitors
Wu, Cheng-Hung; Ronchi, Nicolo; Wang, Kuan-Chi; Wang, Yu-Yun; Mcmitchell, Sean; Banerjee, Kaustuv; van den Bosch, Geert; van Houdt, Jan; Wu, Tian-Li (2022) -
Implication of Channel Percolation in Ferroelectric FETs for Threshold Voltage Shift Modeling
Xiang, Yang; Garcia Bardon, Marie; Kaczer, Ben; Alam, Md Nur Kutubul; Ragnarsson, Lars-Ake; Groeseneken, Guido; Van Houdt, Jan (2020) -
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering
Chen, Zhuo; Ronchi, Nicolo; Walke, Amey; Banerjee, Kaustuv; Popovici, Mihaela Ioana; Katcko, Kostantine; Van den Bosch, Geert; Rosmeulen, Maarten; Afanasiev, Valeri; Van Houdt, Jan (2023) -
Improvement of TANOS NAND Flash performance by the optimazation of a sealing layer
Breuil, Laurent; Furnemont, Arnaud; Rothschild, Aude; Van den Bosch, Geert; Cacciato, Antonio; Van Houdt, Jan (2008)