Browsing by author "Cheng, Kai"
Now showing items 1-20 of 94
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2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Srivastava, Puneet; Cheng, Kai; Das, Jo; Van Hove, Marleen; Leys, Maarten; Marcon, Denis; Visalli, Domenica; Geens, Karen; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2012) -
A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
Das, Jo; Everts, Jordi; Van den Keybus, Jeroen; Van Hove, Marleen; Visalli, Domenica; Srivastava, Puneet; Marcon, Denis; Cheng, Kai; Leys, Maarten; Decoutere, Stefaan; Driesen, Johan; Borghs, Gustaaf (2011) -
A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Marcon, Denis; Kauerauf, Thomas; Medjdoub, Farid; Das, Jo; Van Hove, Marleen; Srivastava, Puneet; Cheng, Kai; Leys, Maarten; Mertens, Robert; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Borghs, Gustaaf (2010-12) -
AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
Malinowski, Pawel; John, Joachim; Lorenz, Anne; Aparicio Alonso, Patricia; Germain, Marianne; Derluyn, Joff; Cheng, Kai; Borghs, Gustaaf; Mertens, Robert; Duboz, Jean Yves; Semond, Fabrice; Hochedez, J.-F.; Benmoussa, A. (2008) -
AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Balachander, Krishnan; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Balachander, Krishnan; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
AlGaN/GaN HEMT : when MOVPE meets the device challenge
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Cheng, Kai; Degroote, Stefan; Derluyn, Joff; Das, Johan; Vandersmissen, Raf; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Degroote, Stefan; Xiao, Dongping; Lorenz, Anne; Boeykens, Steven; Germain, Marianne; Borghs, Gustaaf (2007-01) -
AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Srivastava, Puneet; Das, Jo; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Malinowski, Pawel; Kang, Xuanwu; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf; Mertens, Robert; Germain, Marianne (2010) -
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012) -
AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
Visalli, Domenica; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Van Hove, Marleen; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2009) -
AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
Cheng, Kai; Degroote, Stefan; Leys, Maarten; Medjdoub, Farid; Derluyn, Joff; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2011) -
ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
Germain, Marianne; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Boeykens, Steven; Derluyn, Joff; Das, Johan; Ruythooren, Wouter; Vandersmissen, Raf; Schreurs, Dominique; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Malinowski, Pawel; John, Joachim; Duboz, Jean-Yves; Hellings, Geert; Lorenz, Anne; Rodriguez Madrid, Juan; Sturdevant, Charles; Cheng, Kai; Leys, Maarten; Derluyn, Joff; Das, Jo; Germain, Marianne; Minoglou, Kiki; De Moor, Piet; Frayssinet, Eric; Semond, Fabrice; Hochedez, Jean-Francois; Giordanengo, Boris; Mertens, Robert (2009-12) -
Breakdown voltage mechanisms in AlGaN switching diodes
Lorenz, Anne; John, Joachim; Derluyn, Joff; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2007) -
Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
Cheng, Kai; Leys, Maarten; Dekoster, Johan; Degroote, Stefan (2010) -
Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
Kudrawiec, Robert; Paszkiewicz, B.; Motyka, M.; Misciewic, Jan; Derluyn, Joff; Lorenz, Anne; Cheng, Kai; Das, Jo; Germain, Marianne (2008-11)