Now showing items 1-6 of 6

    • Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs 

      Veloso, Anabela; Witters, Liesbeth; Demand, Marc; Ferain, Isabelle; Son, Nak Jin; Kaczer, Ben; Roussel, Philippe; Adelmann, Christoph; Brus, Stephan; Richard, Olivier; Bender, Hugo; Conard, Thierry; Vos, Rita; Rooyackers, Rita; Van Elshocht, Sven; Collaert, Nadine; De Meyer, Kristin; Biesemans, Serge; Jurczak, Malgorzata (2008)
    • Metal gate technology using a Dy2O3 dielectric cap approach for multiple-VT in NMOS FinFETs 

      Ferain, Isabelle; Son, Nak Jin; Witters, Liesbeth; Collaert, Nadine; Onsia, Bart; Kaczer, Ben; Kauerauf, Thomas; Adelmann, Christoph; Richard, Olivier; Favia, Paola; Bender, Hugo; Vos, Rita; Van Elshocht, Sven; Lehnen, Peer; San Tamer, Kemal; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia (2007)
    • Multi-gate devices for the 32nm technology node and beyond 

      Collaert, Nadine; De Keersgieter, An; Dixit, Abhisek; Ferain, Isabelle; Lai, Li-Shyue; Lenoble, Damien; Mercha, Abdelkarim; Nackaerts, Axel; Pawlak, Bartek; Rooyackers, Rita; Schulz, Thomas; San, Kemal Tamer; Son, Nak Jin; Van Dal, Mark; Verheyen, Peter; von Arnim, Klaus; Witters, Liesbeth; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia (2007)
    • Multi-gate devices for the 32nm technology node and beyond 

      Collaert, Nadine; De Keersgieter, An; Dixit, Abhisek; Ferain, Isabelle; Lai, Li-Shyue; Lenoble, Damien; Mercha, Abdelkarim; Nackaerts, Axel; Pawlak, Bartek; Rooyackers, Rita; Schulz, Thomas; San, Kemal Tamer; Son, Nak Jin; Van Dal, Mark; Verheyen, Peter; von Arnim, Klaus; Witters, Liesbeth; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia (2008)
    • Multiple-Vt FinFET devices through La2O3 dielectric capping 

      Witters, Liesbeth; Veloso, Anabela; Ferain, Isabelle; Demand, Marc; Collaert, Nadine; Son, Nak Jin; Adelmann, Christoph; Meersschaut, Johan; Vos, Rita; Rohr, Erika; Wada, Masayuki; Schram, Tom; Kubicek, Stefan; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia (2008)
    • Treshold voltage modulation in FINFET devices through arsenic ion implantation into TiN/HfSiON gate stack 

      Witters, Liesbeth; Son, Nak Jin; Ferain, Isabelle; San, Tamer; Singanamalla, Raghunath; Kerner, Christoph; Collaert, Nadine; De Meyer, Kristin; Jurczak, Gosia (2007-10)