Browsing by author "Houssiau, L."

Cesium/xenon dual beam depth profiling with TOF-SIMS: measurement and modeling of M+, MCs+, and M2Cs2+ yields

Brison, J.; Conard, Thierry; Vandervorst, Wilfried; Houssiau, L. (2004-05)

Cesium/xenon dual beam depth profiling with TOF-SIMS: measurement and modeling of M+, MCs+, and MCS2)-C-2 (+) yields

Brison, J.; Conard, Thierry; Vandervorst, Wilfried; Houssiau, L. (2004)

Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer

Houssiau, L.; Vitchev, R.G.; Pireaux, J.-J.; Conard, Thierry; Bender, Hugo (2004)

High resolution depth profiling of future gate dielectric materials

Bergmaier, A.; Dollinger, G.; Görgens, L.; Neumaier, P.; Bender, Hugo; Brijs, Bert; Conard, Thierry; Houssiau, L. (2003)

Interfacial chemistry at high-k oxide layers on pretreated silicon wafers: XPS and TOF-SIMS study

Vitchev, R.; Conard, Thierry; Bender, Hugo; Houssiau, L.; Pireaux, J.J. (2004)

Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

Houssiau, L.; Vitchev, R.G.; Pireaux, J.J.; Conard, Thierry; Bender, Hugo; Richard, Olivier; Mack, P.; Wolstenholme, J.; Defranoux, C. (2003)

Physical characterization of mixed HfAlOx layers by complementary analysis techniques

Bender, Hugo; Conard, Thierry; Richard, Olivier; Brijs, Bert; Petry, Jasmine; Vandervorst, Wilfried; Defranoux, C.; Boher, P.; Rochat, N.; Wyon, C.; Mack, P.; Wolstenholme, J.; Vitchev, E.; Houssiau, L.; Pireaux, J-J.; Bergmaier, A.; Dollinger, G. (2004)

Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

Bender, Hugo; Conard, Thierry; Richard, Olivier; Brijs, Bert; Petry, Jasmine; Vandervorst, Wilfried; Defranoux, C.; Boher, P.; Rochat, N.; Wyon, C.; Mack, P.; Wolstenholme, J.; Vitchev, R.; Houssiau, L.; Pireaux, J.J.; Bergmaier, A.; Dollinger, G. (2003)