Browsing by author "Tang, Fu"
Now showing items 1-10 of 10
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A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
Atomic layer deposition of novel interface layers on III-V channel devices
Tang, Fu; Jiang, Xiaoqiang; Xie, Qi; Givens, Michael; Maes, Jan; Sioncke, Sonja; Tsvetan, Ivanov; Nyns, Laura; Lin, Dennis; Collaert, Nadine (2017) -
BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Kaczer, Ben; Xie, Qi; Calka, Pauline; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2017) -
Engineering the IIIV gate stack properties by optimization of the ALD process
Sioncke, Sonja; Ivanov, Tsvetan; Lin, Dennis; Franco, Jacopo; Vais, Abhitosh; Ameen, Mahmoud; Delabie, Annelies; Xie, Qi; Maes, Jan; Givens, Michael; Tang, Fu; Van Elshocht, Sven; Holsteyns, Frank; Barla, Kathy; Collaert, Nadine; Thean, Aaron; De Gendt, Stefan; Heyns, Marc (2014) -
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Kaczer, Ben; Xie, Qi; Maes, Jan Willem; Tang, Fu; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2020) -
First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
Sioncke, Sonja; Franco, Jacopo; Vais, Abhitosh; Putcha, Vamsi; Nyns, Laura; Sibaja-Hernandez, Arturo; Rooyackers, Rita; Calderon Ardila, Sergio; Spampinato, Valentina; Franquet, Alexis; Maes, Willem; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Heyns, Marc; Linten, Dimitri; Mitard, Jerome; Thean, Aaron; Mocuta, Dan; Collaert, Nadine (2017) -
Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: demonstration of a suitable gate stack for top and bottom tier nMOS
Franco, Jacopo; Witters, Liesbeth; Vandooren, Anne; Arimura, Hiroaki; Sioncke, Sonja; Putcha, Vamsi; Vais, Abhitosh; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Subirats, Alexandre; Vaisman Chasin, Adrian; Ragnarsson, Lars-Ake; Kaczer, Ben; Linten, Dimitri; Collaert, Nadine (2017) -
Novel gate stack engineering for high mobility Ge nFETs
Arimura, Hiroaki; Cott, Daire; Loo, Roger; Wostyn, Kurt; Boccardi, Guillaume; Franco, Jacopo; Sioncke, Sonja; Xie, Qi; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Chiu, Eddie; Mitard, Jerome; Mocuta, Dan; Collaert, Nadine (2018) -
Si-passivated Ge nMOS gate stack with low DIT and dipole-induced superior PBTI reliability using 3D-compatible ALD caps and high-pressure anneal
Arimura, Hiroaki; Cott, Daire; Loo, Roger; Vanherle, Wendy; Xie, Qi; Tang, Fu; Jiang, Xiaoqiang; Franco, Jacopo; Sioncke, Sonja; Ragnarsson, Lars-Ake; Chiu, Eddie; Lu, Xiaowan; Geypen, Jef; Bender, Hugo; Maes, Jan; Givens, Michael; Sibaja-Hernandez, Arturo; Wostyn, Kurt; Boccardi, Guillaume; Mitard, Jerome; Collaert, Nadine; Mocuta, Dan (2016) -
Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps
Vais, Abhitosh; Lin, Dennis; Dou, Chunmeng; Martens, Koen; Ivanov, Tsvetan; Xie, Qi; Tang, Fu; Givens, Michael; Maes, Jan; Collaert, Nadine; Raskin, Jean-Pierre; De Meyer, Kristin; Thean, Aaron (2015)