Browsing by author "Himcinschi, C."
Now showing items 1-7 of 7
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Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-K SiO2 xerogel films
Murray, C.; Flannery, C.; Streiter, I.; Schulz, S. E.; Baklanov, Mikhaïl; Mogilnikov, K. P.; Himcinschi, C.; Friedrich, M.; Zahn, D. R. T.; Gessner, T. (2002) -
Comparison of techniques to characterize the density, porosity and elastic modules of porous low-k SiO2 xerogel films
Murray, C.; Flannery, C.; Streiter, I.; Schulz, S. E.; Baklanov, Mikhaïl; Mogilnikov, K. P.; Himcinschi, C.; Friedrich, M.; Zahn, D. R. T.; Gessner, T. (2001) -
Ellipsometric study of the change in the porosity of silica xerogels after chemical modification of the surface with hexamethyldisilazane
Himcinschi, C.; Friedrich, M.; Frühauf, S.; Streiter, I.; Schulz, S.E.; Gessner, T.; Baklanov, Mikhaïl; Moguilnikov, Konstantin; Zahn, D.R.T. (2002) -
Ellipsometric study of the change in the porosity of silica xerogels after surface chemical modification with hexamethyldisilizane
Himcinschi, C.; Friedrich, M.; Frühauf, S.; Streiter, I.; Schulz, S. E.; Gessner, T.; Baklanov, Mikhaïl; Mogilnikov, K. P.; Zahn, D. R. T. (2001) -
Scaling down thickness of ULK materials for 65 node and below and its efect on electrical performance
Fruhauf, S.; Himcinschi, C.; Rennau, M.; Schulze, K.; Schulz, S.E.; Friedrich, M.; Gessner, T.; Zahn, D.R.T.; Le, Quoc Toan; Caluwaerts, Rudy (2005) -
Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
Reiche, M.; Moutanabbir, O.; Himcinschi, C.; Christiansen, S.; Erfurth, E.; Goesele, U.; Mantl, S.; Buca, D.; Zhao, Q. T.; Loo, Roger; Nguyen, Duy; Muster, F.; Petzold, M. (2008) -
Strained silicon-on-insulator : fabrication and characterization
Reiche, M.; Himcinschi, C.; Goesele, U.; Christiansen, S.; Mantl, S.; Buca, D.; Zhao, Q. T.; Feste, S.; Loo, Roger; Nguyen, Duy; Buchholtz, W.; Wei, A.; Horstmann, D.; Feijoo, D.; Storck, P. (2007)