Browsing by author "Heyvaert, Ilse"
Now showing items 1-7 of 7
-
A low cost 90nm RF-CMOS platform for record RF circuit performance
Jeamsaksiri, Wutthinan; Linten, Dimitri; Thijs, Steven; Carchon, Geert; Ramos, Javier; Mercha, Abdelkarim; Sun, Xiao; Soussan, Philippe; Dehan, Morin; Chiarella, Thomas; Venegas, Rafael; Subramanian, Vaidy; Scholten, A.; Wambacq, Piet; Velghe, Rudolf; Mannaert, Geert; Heylen, Nancy; Verbeeck, Rita; Boullart, Werner; Heyvaert, Ilse; Mahadeva Iyer, Natarajan; Groeseneken, Guido; Debusschere, Ingrid; Biesemans, Serge; Decoutere, Stefaan (2005-06) -
Characterisation of tungsten nitride barrier layer for copper metallisation
Jin, S.; Li, H.; Bender, Hugo; Heyvaert, Ilse; Maex, Karen (1999) -
Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6 +N2 +H2
Li, Hua; Heyvaert, Ilse; Sing, Jin; Lanckmans, Filip; Brijs, Bert; Bender, Hugo; Maex, Karen; Froyen, L. (1999) -
Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6+N2+H2
Li, H.; Heyvaert, Ilse; Jin, S.; Lanckmans, Filip; Bender, Hugo; Maex, Karen; Froyen, L. (1998) -
Characterization of WF6/N2/H2 plasma enhanced chemical vapor deposited WxN films as barriers for Cu metallization
Li, Hua; Jin, S.; Bender, Hugo; Lanckmans, Filip; Heyvaert, Ilse; Maex, Karen; Froyen, L. (2000) -
Effect of oxide and W-CMP on the material properties and electromigration behaviour of layered aluminium metallizations
Heyvaert, Ilse; Van Hove, Marleen; Witvrouw, Ann; Maex, Karen; Saerens, Annelies; Roussel, Philippe; Bender, Hugo (1999) -
Effect of oxide and W-CMP on the material properties and electromigration behaviour of layered aluminum metallisations
Heyvaert, Ilse; Van Hove, Marleen; Witvrouw, Ann; Maex, Karen; Saerens, Annelies; Roussel, Philippe; Bender, Hugo (2000)