Browsing by author "Kluth, Jon"

Now showing items 1-7 of 7

    • Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications 

      Caymax, Matty; Brijs, Bert; Carter, Richard; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Delabie, Annelies; Heyns, Marc; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Maes, Jan; Chen, Jerry; Cosnier, Vincent; Green, Martin; Kaushik, Vidya; Kluth, Jon; Tsai, Wilman (2002)

    • Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon 

      Van Elshocht, Sven; Caymax, Matty; De Gendt, Stefan; Conard, Thierry; Petry, Jasmine; Claes, Martine; Witters, Thomas; Zhao, Chao; Brijs, Bert; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Carter, Richard; Kluth, Jon; Daté, L.; Pique, D.; Heyns, Marc (2003)

    • Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition 

      Tsai, Wilman; Chen, Jian; Carter, Richard; Cartier, Eduard; Kluth, Jon; Richard, Olivier; Claes, Martine; Lin, Steven; Nohira, Hiroshi; Conard, Thierry; Caymax, Matty; Young, Edward; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Manabe, Yukiko; Maes, Jan; Rittersma, Chris; Besling, Wim; Roozeboom, F. (2002)

    • Issues, achievements and challenges towards integration of high-k dielectrics 

      Caymax, Matty; De Gendt, Stefan; Vandervorst, Wilfried; Heyns, Marc; Bender, Hugo; Carter, Richard; Conard, Thierry; Degraeve, Robin; Groeseneken, Guido; Kubicek, Stefan; Lujan, Guilherme; Pantisano, Luigi; Petry, Jasmine; Röhr, Erika; Van Elshocht, Sven; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, S.; Tsai, Wilman; Young, Edward; Manabe, Y. (2002)

    • Physical characterization of high-k gate stacks deposited on HF-last surfaces 

      Bender, Hugo; Conard, Thierry; Nohira, Hiroshi; Pétry, Jasmine; Richard, Olivier; Zhao, Chao; Brijs, Bert; Besling, Wim; Detavernier, C.; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Chen, Jian; Kluth, Jon; Tsai, Wilman; Maes, Jos (2001)

    • Scaling of high-k dielectrics towards sub-1nm EOT 

      Heyns, Marc; Beckx, Stephan; Bender, Hugo; Blomme, Pieter; Boullart, Werner; Brijs, Bert; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Henson, Kirklen; Kauerauf, Thomas; Kubicek, Stefan; Lucci, Luca; Lujan, Guilherme; Mentens, Jimmy; Pantisano, Luigi; Petry, Jasmine; Richard, Olivier; Röhr, Erika; Schram, Tom; Vandervorst, Wilfried; Van Doorne, Patrick; Van Elshocht, Sven; Westlinder, Jörgen; Witters, Thomas; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Green, Martin; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, Steven; Tsai, Wilman; Young, Edward; Manabe, Yukiko; Shimamoto, Yasuhiro; Bajolet, Philippe; De Witte, Hilde; Maes, Jan; Date, Lucien; Pique, Didier; Coenegrachts, Bart; Vertommen, Johan; Passefort, Sophie (2003)

    • The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration 

      Kaushik, Vidya; De Gendt, Stefan; Carter, Richard; Claes, Martine; Röhr, Erika; Pantisano, Luigi; Kluth, Jon; Kerber, Andreas; Cosnier, Vincent; Cartier, Eduard; Tsai, Wilman; Young, Edward; Green, Martin; Chen, Jerry; Jang, S.A.; Lin, S.; Delabie, Annelies; Van Elshocht, Sven; Manabe, Yukiko; Richard, Olivier; Zhao, Chao; Bender, Hugo; Caymax, Matty; Heyns, Marc (2003)